CY14B256L-SZ35XCT Cypress Semiconductor Corp, CY14B256L-SZ35XCT Datasheet - Page 12
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CY14B256L-SZ35XCT
Manufacturer Part Number
CY14B256L-SZ35XCT
Description
IC NVSRAM 256KBIT 35NS 32SOIC
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY14B256L-SP35XC.pdf
(22 pages)
Specifications of CY14B256L-SZ35XCT
Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
35ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY14B256L-SZ35XCT
Manufacturer:
CYPRESS
Quantity:
5 554
Note
Document Number: 001-54707 Rev. *F
17. WE must be HIGH during SRAM read cycles.
18. HSB must remain HIGH during READ and WRITE cycles.
19. If WE is low when CE goes low, the outputs remain in the high impedance state.
20. CE or WE must be > V
Data Output
Data Output
Data Input
Address
Data Output
Data Input
Address
Address
WE
CE
CE
OE
I
IH
CC
WE
CE
during address transitions.
High Impedance
Figure 6. SRAM Read Cycle #2: CE and OE Controlled
Standby
Figure 7. SRAM Write Cycle #1: WE Controlled
Figure 8. SRAM Write Cycle #2: CE Controlled
Previous Data
t
SA
t
t
SA
PU
t
LZCE
t
LZOE
t
Address Valid
AA
High Impedance
t
t
ACE
AW
t
Address Valid
t
PWE
t
SCE
HZWE
Address Valid
t
t
SCE
DOE
t
t
PWE
RC
t
Active
WC
Input Data Valid
t
WC
t
SD
t
High Impedance
SD
Input Data Valid
Output Data Valid
t
LZWE
[18, 19, 20]
[18, 19, 20]
t
t
HD
HD
t
HA
t
HA
[17, 18]
t
t
HZCE
HZOE
t
PD
CY14B256LA
Page 12 of 22
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