M25PX32-VMW6F NUMONYX, M25PX32-VMW6F Datasheet - Page 23

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M25PX32-VMW6F

Manufacturer Part Number
M25PX32-VMW6F
Description
IC SRL FLSH 32MB DUAL IO 3V SO8W
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25PX32-VMW6F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
32M (4M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25PX32-VMW6FCT

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M25PX32
Instructions
6
Instructions
All instructions, addresses and data are shifted in and out of the device, most significant bit
first.
Serial Data input(s) DQ0 (DQ1) is (are) sampled on the first rising edge of Serial Clock (C)
after Chip Select (S) is driven Low. Then, the one-byte instruction code must be shifted in to
the device, most significant bit first, on Serial Data input(s) DQ0 (DQ1), each bit being
latched on the rising edges of Serial Clock (C).
The instruction set is listed in
Table
5.
Every instruction sequence starts with a one-byte instruction code. Depending on the
instruction, this might be followed by address bytes, or by data bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read Data Bytes at higher speed (FAST_READ),
Dual Output Fast Read (DOFR), Read OTP (ROTP), Read Lock Registers (RDLR), Read
Status Register (RDSR), Read Identification (RDID) or Release from Deep Power-down
(RDP) instruction, the shifted-in instruction sequence is followed by a data-out sequence.
Chip Select (S) can be driven High after any bit of the data-out sequence is being shifted
out.
In the case of a Page Program (PP), Program OTP (POTP), Dual Input Fast Program
(DIFP), Subsector Erase (SSE), Sector Erase (SE), Bulk Erase (BE), Write Status Register
(WRSR), Write to Lock Register (WRLR), Write Enable (WREN), Write Disable (WRDI) or
Deep Power-down (DP) instruction, Chip Select (S) must be driven High exactly at a byte
boundary, otherwise the instruction is rejected, and is not executed. That is, Chip Select (S)
must driven High when the number of clock pulses after Chip Select (S) being driven Low is
an exact multiple of eight.
All attempts to access the memory array during a Write Status Register cycle, Program
cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program
cycle or Erase cycle continues unaffected.
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