CY7C185-15VI Cypress Semiconductor Corp, CY7C185-15VI Datasheet - Page 4

• Manufacturer Part Number: CY7C185-15VI
• Description: 8KX8 28-PIN 300 MIL SRAM
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C185-15VI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 64K (8K x 8)
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS compliant by exemption

Switching Waveforms
Document #: 38-05043 Rev. *D
Notes
10. Data IO is High Z if OE = V
11. The internal write time of the memory is defined by the overlap of CE
8. Device is continuously selected. OE, CE
9. WE is HIGH for read cycle.
DATA OUT
DATA OUT
CURRENT
ADDRESS
to initiate write. A write can be terminated by CE
edge of the signal that terminates the write.
SUPPLY
CE
CE
V
OE
OE
CC
1
2
PREVIOUS DATA VALID
HIGH IMPEDANCE
IH
, CE
t
PU
1
= V
t
LZCE
IH
1
, WE = V
= V
t
t
ACE
LZOE
IL
. CE
1
t
50%
OHA
or WE going HIGH or CE
t
IL
DOE
, or CE
2
= V
Figure 3. Read Cycle No.2
Figure 2. Read Cycle No.1
IH
2
.
=V
t
AA
IL
.
t
RC
1
LOW, CE
2
going LOW. The data input setup and hold timing must be referenced to the rising
t
RC
2
HIGH and WE LOW. CE
[10,11]
[8,9]
DATA VALID
1
and WE must be LOW and CE
t
DATA VALID
HZOE
t
HZCE
t
PD
50%
IMPEDANCE
2
must be HIGH
HIGH
CY7C185
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