LT1158ISW#PBF Linear Technology, LT1158ISW#PBF Datasheet - Page 5

• Manufacturer Part Number: LT1158ISW#PBF
• Description: IC MOSFET DRVR 1/2BRDG NCH16SOIC
• Manufacturer: Linear Technology

Specifications of LT1158ISW#PBF

• Configuration: Half Bridge
• Input Type: PWM
• Current - Peak: 500mA
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 56V
• Voltage - Supply: 5 V ~ 30 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.300", 7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Delay Time: -

TYPICAL PERFORMANCE CHARACTERISTICS
1.50
1.45
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.00
1.05
350
300
250
200
150
100
400
50
0
0
0
Current Limit Inhibit
V
Top Gate Rise Time
V2 – V11
DS
5
5
Threshold
10
10
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
15
15
C
C
C
GATE
GATE
GATE
20
20
= 10000pF
= 3000pF
= 1000pF
25
25
30
30
+25°C
–40°C
+85°C
35
LT1158 G10
35
LT1158 G13
40
40
300
250
150
400
350
200
100
350
300
250
200
150
100
400
50
50
0
0
0
0
Bottom Gate Rise Time
Top Gate Fall Time
5
5
10
10
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
15
15
C
C
C
GATE
GATE
GATE
20
20
C
C
C
= 10000pF
= 3000pF
= 1000pF
GATE
GATE
GATE
25
25
= 10000pF
= 3000pF
= 1000pF
30
30
35
LT1158 G11
35
LT1158 G14
40
40
300
250
150
800
100
400
350
200
100
700
600
500
400
300
200
50
0
0
0
0
Bottom Gate Fall Time
Transition Times vs R
V
C
10
+
GATE
5
= 12V
20
= 3000pF
10
GATE RESISTANCE (Ω)
SUPPLY VOLTAGE (V)
30
RISE TIME
15
40
C
C
C
GATE
GATE
GATE
20
50
= 10000pF
= 3000pF
= 1000pF
60
LT1158
25
Gate
FALL TIME
70
30
80
35
LT1158 G12
LT1158 G15
90
1158fb
5
100
40