MCP14E4-E/SN Microchip Technology, MCP14E4-E/SN Datasheet - Page 14

• Manufacturer Part Number: MCP14E4-E/SN
• Description: IC MOSFET DVR 4.0A DUAL 8SOIC
• Manufacturer: Microchip Technology
• Type: Low Sider

Specifications of MCP14E4-E/SN

• Number Of Outputs: 2
• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 46ns
• Current - Peak: 4A
• Number Of Configurations: 2
• Voltage - Supply: 4.5 V ~ 18 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Rise Time: 30 ns
• Fall Time: 30 ns
• Supply Voltage (min): 4.5 V
• Supply Current: 2 mA
• Maximum Power Dissipation: 665 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

MCP14E3/MCP14E4/MCP14E5
4.6.2
The power dissipation associated with the quiescent
current draw of the MCP14E3/MCP14E4/MCP14E5
depends upon the state of the input and enable pins.
Refer to the DC Characteristic table for the quiescent
current draw for specific combinations of input and
enable pin states. The quiescent power dissipation is:
EQUATION 4-3:
4.6.3
The operating power dissipation occurs each time the
MOSFET driver output transitions because for a very
short period of time both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
leads to a power dissipation describes as:
EQUATION 4-4:
DS22062B-page 14
Where:
Where:
P
Q
V
V
I
CC
I
QH
DD
DD
QL
=
D
f
(
QUIESCENT POWER DISSIPATION
OPERATING POWER DISSIPATION
I
QH
P
=
=
=
=
=
=
=
CC
×
D
Cross-conduction constant
Quiescent current in the high
state
Duty cycle
Quiescent current in the low
state
MOSFET driver supply voltage
=
(A*sec)
Switching frequency
MOSFET driver supply voltage
+
CC f
I
QL
×
×
(
×
1 D
V
–
DD
)
) V
×
DD
© 2008 Microchip Technology Inc.