MCP14E4-E/SN Microchip Technology, MCP14E4-E/SN Datasheet - Page 3

• Manufacturer Part Number: MCP14E4-E/SN
• Description: IC MOSFET DVR 4.0A DUAL 8SOIC
• Manufacturer: Microchip Technology
• Type: Low Sider

Specifications of MCP14E4-E/SN

• Number Of Outputs: 2
• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 46ns
• Current - Peak: 4A
• Number Of Configurations: 2
• Voltage - Supply: 4.5 V ~ 18 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Rise Time: 30 ns
• Fall Time: 30 ns
• Supply Voltage (min): 4.5 V
• Supply Current: 2 mA
• Maximum Power Dissipation: 665 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1.0
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ............................... (V
Enable Voltage .............................(V
Input Current (V
Package Power Dissipation (T
8L-DFN ....................................................................... Note 3
8L-PDIP ........................................................................1.10W
8L-SOIC .....................................................................665 mW
DC CHARACTERISTICS (NOTE 2)
© 2008 Microchip Technology Inc.
Electrical Specifications: Unless otherwise indicated, T
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
stand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage
Low-Level Input Voltage
Hysteresis
Enable Leakage Current
Propagation Delay Time
Propagation Delay Time
Note 1:
2:
3:
ELECTRICAL
CHARACTERISTICS
Parameters
Switching times ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area on the PCB.
IN
>V
DD
)................................................50 mA
A
= 50°C)
DD
DD
V
V
V
+ 0.3V) to (GND – 5V)
I
+ 0.3V) to (GND - 5V)
Sym
R
I
V
R
ENBL
V
V
V
REV
EN_H
HYST
V
I
t
t
EN_L
t
t
I
t
PK
t
D1
D2
D3
D4
IN
OH
OH
OL
OL
R
F
IH
IN
IL
MCP14E3/MCP14E4/MCP14E5
V
DD
1.60
1.30
0.10
Min
2.4
– 0.025
–1
40
—
—
—
—
—
—
—
—
—
—
—
—
-5
A
>1.5
1.90
2.20
0.30
Typ
1.3
2.5
2.5
4.0
1.5
= +25°C, with 4.5V ≤ V
—
—
—
—
15
18
46
50
85
60
50
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
V
0.025
DD
Max
2.90
2.40
0.60
115
0.8
3.5
3.0
—
—
—
—
30
30
55
55
—
—
1
+0.3
Units
µA
µA
ns
ns
ns
ns
ns
ns
V
V
V
V
V
Ω
Ω
A
A
V
V
V
DD
0V ≤ V
DC Test
DC Test
I
I
V
Duty cycle ≤ 2%, t ≤ 300 µs
Figure
C
Figure
C
Figure
Figure
V
V
V
ENB_A = ENB_B = GND
Figure 4-3
Figure 4-3
OUT
OUT
≤ 18V.
DD
DD
DD
DD
L
L
= 2200 pF
= 2200 pF
= 18V (Note 2)
= 12V, LO to HI Transition
= 12V, HI to LO Transition
= 12V,
= 10 mA, V
= 10 mA, V
IN
4-1,
4-1,
4-1,
4-1,
≤ V
Conditions
(Note 1)
(Note 1)
Figure 4-2
Figure 4-2
Figure 4-2
Figure 4-2
DD
DD
DD
DS22062B-page 3
= 18V
= 18V