HIP6601BCBZ Intersil, HIP6601BCBZ Datasheet

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HIP6601BCBZ

Manufacturer Part Number
HIP6601BCBZ
Description
IC DRIVER MOSFET DUAL 8-SOIC
Manufacturer
Intersil
Datasheet

Specifications of HIP6601BCBZ

Configuration
High and Low Side, Synchronous
Input Type
PWM
Current - Peak
400mA
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
15V
Voltage - Supply
10.8 V ~ 13.2 V
Operating Temperature
0°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Delay Time
-

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Synchronous Rectified Buck
MOSFET Drivers
The HIP6601B, HIP6603B and HIP6604B are high-
frequency, dual MOSFET drivers specifically designed to
drive two power N-Channel MOSFETs in a synchronous
rectified buck converter topology. These drivers combined
with a HIP63xx or the ISL65xx series of Multi-Phase Buck
PWM controllers and MOSFETs form a complete core-
voltage regulator solution for advanced microprocessors.
The HIP6601B drives the lower gate in a synchronous
rectifier to 12V, while the upper gate can be independently
driven over a range from 5V to 12V. The HIP6603B drives
both upper and lower gates over a range of 5V to 12V. This
drive-voltage flexibility provides the advantage of optimizing
applications involving trade-offs between switching losses
and conduction losses. The HIP6604B can be configured as
either a HIP6601B or a HIP6603B.
The output drivers in the HIP6601B, HIP6603B and
HIP6604B have the capacity to efficiently switch power
MOSFETs at frequencies up to 2MHz. Each driver is
capable of driving a 3000pF load with a 30ns propagation
delay and 50ns transition time. These products implement
bootstrapping on the upper gate with only an external
capacitor required. This reduces implementation complexity
and allows the use of higher performance, cost effective,
N-Channel MOSFETs. Adaptive shoot-through protection is
integrated to prevent both MOSFETs from conducting
simultaneously.
®
1
Data Sheet
1-888-INTERSIL or 1-888-468-3774
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
HIP6601B, HIP6603B, HIP6604B
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
• Small 8 LD SOIC and EPSOIC and 16 LD QFN Packages
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Output Stage Shutdown
• Supply Undervoltage Protection
• QFN Package
Applications
• Core Voltage Supplies for Intel Pentium® III, AMD®
• High Frequency Low Profile DC-DC Converters
• High Current Low Voltage DC-DC Converters
Related Literature
• Technical Brief TB363, Guidelines for Handling and
- Fast Output Rise Time
- Propagation Delay 30ns
- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat
- Near Chip-Scale Package Footprint; Improves PCB
Athlon™ Microprocessors
Processing Moisture Sensitive Surface Mount Devices
(SMDs)
No Leads—Product Outline.
Efficiency and Thinner in Profile.
All other trademarks mentioned are the property of their respective owners.
July 20, 2005
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002-2005. All Rights Reserved.
FN9072.7

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HIP6601BCBZ Summary of contents

Page 1

... CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. | 1-888-INTERSIL or 1-888-468-3774 Intersil (and design registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002-2005. All Rights Reserved. All other trademarks mentioned are the property of their respective owners. FN9072.7 ...

Page 2

Ordering Information TEMP. RANGE PART NUMBER (°C) PACKAGE HIP6601BCB SOIC HIP6601BCB SOIC Tape and Reel HIP6601BECB EPSOIC HIP6601BECB EPSOIC Tape and Reel HIP6603BCB ...

Page 3

Typical Application: 3-Channel Converter Using HIP6301 and HIP6601B Gate Drivers +5V VFB COMP VCC PWM1 VSEN PWM2 PWM3 PGOOD MAIN CONTROL HIP6301 VID ISEN1 ISEN2 FS ISEN3 GND 3 HIP6601B, HIP6603B, HIP6604B +5V BOOT PVCC UGATE VCC PHASE DRIVE PWM ...

Page 4

Absolute Maximum Ratings Supply Voltage (VCC .15V Supply ...

Page 5

Functional Pin Description UGATE (Pin 1), (Pin 16 QFN) Upper gate drive output. Connect to gate of high-side power N-Channel MOSFET. BOOT (Pin 2), (Pin 2 QFN) Floating bootstrap supply pin for the upper gate drive. Connect a bootstrap capacitor ...

Page 6

A falling transition on PWM indicates the turn-off of the upper MOSFET and the turn-on of the lower MOSFET. A short propagation delay [ encountered before the PDLUGATE upper gate begins to fall [t ]. Again, the adaptive ...

Page 7

MOSFETs. The power dissipated by the driver is approximated as:  3  1.05f VCC  ...

Page 8

Typical Performance Curves 1000 VCC = PVCC = 12V FREQUENCY 800 = 1MHz 600 FREQUENCY = 500kHz 400 FREQUENCY = 200kHz 200 0 1.0 2.0 3.0 GATE CAPACITANCE (C FIGURE 3. POWER DISSIPATION vs LOADING 400 VCC = 12V, PVCC ...

Page 9

Small Outline Exposed Pad Plastic Packages (EPSOIC) N INDEX 0.25(0.010) H AREA E - TOP VIEW SEATING PLANE - -C- α 0.10(0.004) 0.25(0.010 SIDE VIEW 1 ...

Page 10

... Dimensions D2 and E2 are for the exposed pads which provide improved electrical and thermal performance. 8. Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389. 9. Features and dimensions A2, A3, D1, E1, P & θ are present when Anvil singulation method is used and not present for saw singulation ...

Page 11

... Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use ...

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