MIC5013BN Micrel Inc, MIC5013BN Datasheet - Page 7

IC DRIVER MOSFET HI/LO SIDE 8IP

MIC5013BN

Manufacturer Part Number
MIC5013BN
Description
IC DRIVER MOSFET HI/LO SIDE 8IP
Manufacturer
Micrel Inc
Datasheet

Specifications of MIC5013BN

Configuration
High or Low Side
Input Type
Non-Inverting
Delay Time
60µs
Number Of Configurations
1
Number Of Outputs
1
Voltage - Supply
7 V ~ 32 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Peak
-
High Side Voltage - Max (bootstrap)
-

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Quantity
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MIC5013
Applications Information
Circuit Topologies
The MIC5013 is suited for use in high- or low-side driver
applications with over-current protection for both current-
sensing and standard MOSFETs. In addition, the MIC5013
works well in applications where, for faster switching times,
the supply is bootstrapped from the MOSFET source out-
put. Low voltage, high-side drivers (such as shown in the
Test Circuit) are the slowest; their speed is reflected in the
gate turn-on time specifications. The fastest drivers are the
low-side and bootstrapped high-side types. Load current
switching times are often much faster than the time to full
gate enhancement, depending on the circuit type, the MOS-
FET, and the load. Turn-off times are essentially the same
for all circuits (less than 10µs to V
one topology over another is based on a combination of
considerations including speed, voltage, and desired system
characteristics. Each topology is described in this section.
Note that I
current that just trips the over-current comparator.
July 2005
L
, as used in the design equations, is the load
Control Input
Control Input
R
20kΩ
TH
10kΩ
R
GS
TH
(Continued)
1
2
3
4
= 1V). The choice of
Thresh
Source
Input
Sense
1
2
3
4
MIC5013
Thresh
Source
Input
Sense
MIC5013
Figure 3. High-Side Driver
Figure 2. Low-Side Driver
Fault
Gate
Gnd
V+
Fault
Gate
Gnd
with Current Shunt
V+
with Current Shunt
24kΩ
8
7
6
5
R 1
8
7
6
5
10µF
V +
=7 to 15V
100Ω
R 2
7
+
V +
+
10µF
LOAD
Low-Side Driver with Current Shunt (Figure 2). The over-
current comparator monitors RS and trips if I
V
As a guideline, keep V
500mV (R
offer the best noise immunity, but also compromise switch
drop (especially in low voltage applications) and power
dissipation.
The trip current is set higher than the maximum expected
load current—typically twice that value. Trip point accuracy
is a function of resistor tolerances, comparator offset (only
a few millivolts), and threshold bias voltage (V2). The val-
ues shown in Figure 2 are designed for a trip current of 20
amperes. It is important to ground pin 4 at the current shunt
R
A key advantage of the low-side topology is that the load sup-
ply is limited only by the MOSFET BVDSS rating. Clamping
may be required to protect the MOSFET drain terminal from
=24V
TRIP
S
, to eliminate the effects of ground resistance.
IRF541
R
18mΩ
IRC 4LPW-5*
S
. R is selected to produce the desired trip voltage.
LOAD
V
LOAD
IRF540
TH
10mΩ
IRC 4LPW-5
(International Resistive Company)
R
S
= 3.3kΩ to 20kΩ). Thresholds at the high end
*International Resistive Company
R1=
R2=100Ω
R =
R =
For this example:
I =10A (trip current)
V
L
TR I P
TH
S
R =
I =20A (trip current)
V
R =
For this example:
TRIP
L
TH
TR I P
S
100mV+
=100mV
1mA
2200
V
V
V
TR I P
TR I P
2200
V
within the limits of 100mV and
= 200mV
I
+
TR I P
L
I
L
–1000
V
–1000
TR I P
L
× R
S
MIC5013
Micrel, Inc.
exceeds

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