E-L6569 STMicroelectronics, E-L6569 Datasheet - Page 4

• Manufacturer Part Number: E-L6569
• Description: IC DRVR HALF BRDG HV W/OSC 8DIP
• Manufacturer: STMicroelectronics
• Type: Dual Peripheral Driverr

Specifications of E-L6569

• Configuration: Half Bridge
• Input Type: Self Oscillating
• Current - Peak: 175mA
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 600V
• Voltage - Supply: 10 V ~ 16.6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supply Voltage (min): 10 V
• Supply Current: 11 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Bridge Type: Half Bridge
• Minimum Operating Temperature: 0 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Delay Time: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4585-5

L6569 L6569A
ELECTRICAL CHARACTERISTCS (continued)
OSCILLATOR FREQUENCY
The frequency of the internal oscillator can be programmed using external resistor and capacitor.
The nominal oscillator frequency can be calculated using the following equation:
Where R
The device can be driven in "shut down" condition keeping the C
taken:
1. When C
2. The forced discharge of the oscillator capacitor C
Figure 1.
4/13
Symbol
V
V
RF OFF
V
limit the current discharge with a resistive path imposing R · C
V
R
RFO
V
I
DC
f
AVE
CFU
CFL
out
t
ON
BC
d
N
F
and C
F
Pin
2
3
1
6
is to GND the high side driver is off and the low side is on
RF High Level Output Voltage
RF Low Level Output Voltage
CF Upper Threshold
CF Lower Threshold
Internal Dead Time
Duty Cycle, Ratio Between Dead
Time + Conduction Time of High
Side and Low Side Drivers
On resistance of Boostrap
LDMOS
Boostrap Voltage before UVLO
Average Current from Vs
Oscillation Frequency
F
are the external resistor and capacitor.
fault signal
Parameter
f
O SC
=
---------------------------------------- -
2 R
F
R
1
C
C
I
I
V
No Load, fs = 60KHz
R
F
RF
RF
F
S
T
F
= 12K; C
= 8.2
must not be shorter than 1us: a simple way to do this is to
= 1mA
= -1mA
In2
GNDM
R
Test Condition
F
=
T
----------------------------------------- -
1.3863 R
= 1nF
F
1
2
3
4
F
pin close to GND, but some cares have to be
>1 s (see fig.1)
1
F
C
F
V
Min.
S
3.80
0.85
0.45
8
7
6
5
7.7
2.5
50
57
-0.05
Typ.
1.25
120
0.5
3.6
1.2
60
8
4
V
Max.
1.65
0.55
S
200
8.2
4.3
1.5
63
-0.2
Unit
kHz
mV
mA
V
V
V
V
s