IR1167ASPBF International Rectifier, IR1167ASPBF Datasheet - Page 12
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IR1167ASPBF
Manufacturer Part Number
IR1167ASPBF
Description
IC MOSFET DRIVER N-CHAN 8-SOIC
Manufacturer
International Rectifier
Series
SmartRectifier™r
Datasheet
1.IR1167ASPBF.pdf
(16 pages)
Specifications of IR1167ASPBF
Configuration
Low-Side
Input Type
Self Oscillating
Delay Time
60ns
Current - Peak
2A
Number Of Configurations
1
Number Of Outputs
1
Voltage - Supply
12 V ~ 18 V
Operating Temperature
-25°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Part Status
Active and Preferred
Package
8-Pin SOIC(NB)
Circuit
Switching Regulator Controller
Topology
Flyback / Resonant Half-Bridge
Current Mode
Discontinuous / Critical / Continuous
Vcc (min)
11.4
Vcc (max)
18
Vout (max)
200
Iout (a)
+2 / -7
Switch Freq (khz)
up to 500kHz
Vgate Clamp (v)
10.7
Programmability
MOT / OVT
Enable Pin
Yes
Isleep (ua)
200
Automatic Mot Protection
No
Pbf
PbF Option Available
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Switching Freq, T
Fig 11.
www.irf.com
Max. Synchronous HEXFET Switching Frequency (kHz)
20
19
18
17
16
15
14
13
12
11
4
3
2
1
0
-50
1W HEXFET Gate Resistance included
50
Max. V
100 150 200 250 300 350 400 450 500
J
CC
=125 C, T
Fig 9. MOT vs. Temp.
0
Voltage vs. Synchronous Rectifier
Temperature ( °C )
IC
= 85 C, external R
50
RMOT = 5k
RMOT= 75k
Csync = 2nF
Csync = 5nF
Csync = 8nF
Csync = 15nF
Csync = 20nF
100
G
=1W,
150
Switching Freq, T
Fig 12.
Max. Synchronous HEXFET Switching Frequency (kHz)
100
80
60
40
20
20
19
18
17
16
15
14
13
12
11
0
1W HEXFET Gate Resistance included
0
50
Fig 10. Input Bias Current vs. V
Max. V
100 150 200 250 300 350 400 450 500
J
Drain Sense Voltage (V D) (V)
CC
=125 C, T
50
Voltage vs. Synchronous Rectifier
IR1167AS/BS
IC
100
= 85 C, external R
Csync = 2nF
Csync = 5nF
Csync = 8nF
Csync = 15nF
Csync = 20nF
T J = -25°C
T J = 25°C
T J = 125°C
150
G
D
=2W,
.
12
200