ISL6801AB Intersil, ISL6801AB Datasheet - Page 3

• Manufacturer Part Number: ISL6801AB
• Description: IC DRIVER HI-SIDE HI VOLT 8-SOIC
• Manufacturer: Intersil

Specifications of ISL6801AB

• Configuration: High-Side
• Input Type: Non-Inverting
• Current - Peak: 200mA
• Number Of Configurations: 1
• Number Of Outputs: 1
• High Side Voltage - Max (bootstrap): 120V
• Voltage - Supply: 4.5 V ~ 6.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Delay Time: -

Absolute Maximum Ratings
Supply Voltage, V
Driver Output Stage Voltage, V
Source Reference Voltage, V
ESD Rating, V
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -40
Supply Voltage Range (Max) . . . . . . . . . . . . . . . . . . . . 4.5V to 6.5V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Operating Temperature Range
Source Reference Voltage
Supply Voltage (Note 2)
Driver Output Supply
Switching Frequency
Voltage Transconductance (Note 3)
Peak Gate Drive Current
Continuous Gate Drive Current (Note 3)
Gate Drive Level LOW
Gate Drive Level LOW
Gate Drive Level HIGH
Gate Drive Level HIGH
Total IN to Output Delay (Figure 1)
Total RES to Output Delay (Figure 2)
Output Rise/Fall Times
VB Drop Voltage (Figure 4, Note 4)
1. θ
(-5V for 0.5ms, MOSFET Off). . . . . . . . . . . . . . . . . . . . (Min) -1.5V
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . (Min) 820V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (Max) 120V
(Per MIL-STD-883 Method 3015.7)
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
PARAMETER
ESD
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16V
S
B
(Referred to GND) . . . . . . . . .130V
3
All values are over full temperature range.
td
td
RES - HOH, L
V
SYMBOL
V
V
V
V
V
Fall/Rise
VB
I
VB - GND
I
IN-HOH, L
t
HOpeak
VB, HOH
VB, HOH
dVs/dt
HOL, VS
HOL, VS
HOcont
HOH, L
VB - VS
V
VS
T
DROP
CC
f
A
o
C to 125
Guaranteed by Design
-1.8V Continuous, VB/V
low, IN = 0V, RES = 5V, V
6.5V, VB = 5V and 12V,
(Load R = 50Ω, C = 6.8nF)
T
Ident. to V
Functional
Sink/Source Current VB = 5V and 16V,
100ns
Sink/Source Current Continuous
IN at H, I
IN at H, I
IN at L, I
IN at L, I
at V
Output Trigger Level: 3.5V ON at
VB = 5V, 1.0V OFF at VB = 16V,
Input 2.5V (Load R = 50Ω, C = 6.8nF)
VB-VS = 5V and 16V,
(Load R = 50Ω, C = 6.8nF)
VB-VS = 5V
(Load R = 50Ω, C = 6.8nF)
VB-VS = 16V
VB-VS = 9.0V, C
(Load R = 50Ω, C = 6.8nF)
A
= -40 to 125
o
CC
C
ISL6801
= 5.0V, RES = 5V,
HO
HO
HO
HO
TEST CONDITIONS
GS
= 1mA, VB-VS = 5V and 16V
= 1mA, VB-VS = 5V and 16V
= 100mA
= 100mA
of MOSFET Device
o
Thermal Information
Thermal Resistance (Typical, Note 1)
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
Maximum Storage Temperature Range . . . . . . . . . -55
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .245
C
100
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(SOIC Lead Tips Only)
= 1µF,
OH
CC
must stay
= 4.5V and
MIN
-1.5
100
-40
4.5
4.0
2.0
6.5
-
-
-
-
-
-
-
-
-
-
-
TYP
200
100
200
100
8.5
1.0
1.0
8
-
-
-
-
-
-
-
-
-
-
(Note 5)
MAX
16.0
125
120
500
500
500
210
6.5
0.3
2.2
0.5
2.2
3.0
3.0
-
-
-
-
o
θ
C to 150
JA
UNITS
V/µs
(
90
kHz
mA
mA
mV
o
o
µs
µs
ns
ns
V
V
V
V
V
V
V
V
C
C/W)
o
o
o
C
C
C