VND05BSP13TR STMicroelectronics, VND05BSP13TR Datasheet - Page 12

• Manufacturer Part Number: VND05BSP13TR
• Description: RELAY SSR ISO HI-SIDE POWERSO-10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND05BSP13TR

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 130 mOhm
• Current - Output / Channel: 1.6A
• Current - Peak Output: 9A
• Voltage - Supply: 6 V ~ 26 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Switch Type: High Side
• Power Switch Family: VND05B
• Power Switch On Resistance: 200mOhm
• Output Current: 9A
• Mounting: Surface Mount
• Supply Current: 35uA
• Package Type: PowerSO
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Pin Count: 12
• Power Dissipation: 59W
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-3299-2

Application information
3.1
3.2
12/16
Functional description
The device has a diagnostic output which indicates open load in on-state, open load in off-
state, over temperature conditions and stuck-on to V
From the falling edge of the input signal, the status output, initially low to signal a fault
condition (overtemperature or open load on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl) and in case of open open load (tpol)
respectively.
This feature allows to discriminate the nature of the detected fault. To protect the device
against short circuit and over current condition, the thermal protection turns the integrated
Power MOSFET off at a minimum junction temperature of 140°C. When this temperature
returns to 125°C the switch is automatically turned on again. In short circuit the protection
reacts with virtually no delay, the sensor being located inside the Power MOSFET area. An
internal function of the devices ensures the fast demagnetization of inductive loads with a
typical voltage (V
according to the formula:
P
where f = switching frequency and V
The maximum inductance which causes the chip temperature to reach the shut-down
temperature in a specified thermal environment is a function of the load current for a fixed
V
disconnected, with V
Protecting the device against reverse battery
The simplest way to protect the device against a continuous reverse battery voltage (-26V)
is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical
application circuit
The consequences of the voltage drop across this diode are as follows:
●
●
If there is no need for the control unit to handle external analog signals referred to the power
GND, the best approach is to connect the reference potential of the control unit to node [1]
(see
way no shift of V
pin; this solution allows the use of a standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that occours in the automotive environment.
dem
CC
, V
If the input is pulled to power GND, a negative voltage of -V
V
The undervoltage shutdown level is increased by V
= 0.5
Figure
IH
demag
thresholds and V
9.), which becomes the common signal GND for the whole control board. In this
and f according to the above formula. In this device if the GND pin is
L
load
IH
demag
, V
(Figure
IL
CC
load
) of -18V. This function allows to greatly reduces the power dissipation
and V
)
not exceeding 16V, it will switch off.
2
STAT
8.).
[(V
STAT
are increased by V
CC
takes place and no negative voltage appears on the INPUT
+V
demag
demag
)/V
= demagnetization voltage.
demag
F
]
with respect to power GND).
f
CC
.
F
.
F
is seen by the device. (V
VND05BSP
IL
,