ISL55111IRZ Intersil, ISL55111IRZ Datasheet - Page 12

IC MOSFET DRIVER DUAL HS 16-QFN

ISL55111IRZ

Manufacturer Part Number
ISL55111IRZ
Description
IC MOSFET DRIVER DUAL HS 16-QFN
Manufacturer
Intersil
Type
High Sider
Datasheet

Specifications of ISL55111IRZ

Input Type
Non-Inverting
Number Of Outputs
2
On-state Resistance
3 Ohm
Current - Output / Channel
300mA
Current - Peak Output
3.5A
Voltage - Supply
5 V ~ 13.2 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-VQFN Exposed Pad, 16-HVQFN, 16-SQFN, 16-DHVQFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Detailed Description
The ISL55110, ISL55111 are Dual High Speed MOSFET
Drivers intended for applications requiring accurate pulse
generation and buffering. Target applications include
Ultrasound, CCD Imaging, Automotive Piezoelectric
distance sensing and clock generation circuits.
With a wide output voltage range and low ON-resistance,
these devices can drive a variety of resistive and capacitive
loads with fast rise and fall times, allowing high speed
operation with low skew as required in large CCD array
imaging applications.
The ISL55110 and ISL55111 are compatible with 3.3V and
5V logic families and incorporate tightly controlled input
thresholds to minimize the effect of input rise time on output
pulse width. The ISL55110 has a pair of in-phase drivers
while the ISL55111 has two drivers operating in antiphase.
Both inputs of the device have independent inputs to allow
external time phasing if required.
In addition to power MOSFET drivers, the ISL55110,
ISL55111 is well suited for other applications such as bus,
control signal, and clock drivers on large memory of
microprocessor boards, where the load capacitance is large
and low propagation delays are required. Other potential
applications include peripheral power drivers and charge-
pump voltage inverters.
Input Stage
The input stage is a high impedance input with rise/fall
hysteresis. This means that the inputs will be directly
compatible with both TTL and lower voltage logic over the
entire VDD range. The user should treat the inputs as high
speed pins and keep rise and fall times to <2ns.
Output Stage
The ISL55110, ISL55111 output is a high-power CMOS
driver, swinging between ground and VH. At V
output impedance of the inverter is typically 3.0Ω. The high
peak current capability of the ISL55110, ISL55111 enables it
to drive a 330pF load to 12V with a rise time of <3.0ns over
the full temperature range. The output swing of the
ISL55110, ISL55111 comes within < 30mV of the V
Ground rails.
Application Notes
Although the ISL55110, ISL55111 is simply a dual
level-shifting driver, there are several areas to which careful
attention must be paid.
Grounding
Since the input and the high current output current paths
both include the ground pin, it is very important to minimize
any common impedance in the ground return. Since the
ISL55111 has one inverting input, any common impedance
will generate negative feedback, and may degrade the delay
12
H
= 12V, the
H
ISL55110, ISL55111
and
times and rise and fall times. Use a ground plane if possible
or use separate ground returns for the input and output
circuits. To minimize any common inductance in the ground
return, separate the input and output circuit ground returns
as close to the ISL55110, ISL55111 as possible.
Bypassing
The rapid charging and discharging of the load capacitance
requires very high current spikes from the power supplies. A
parallel combination of capacitors which have a low
impedance over a wide frequency range should be used. A
4.7µF tantalum capacitor in parallel with a low inductance
0.1µF capacitor is usually sufficient bypassing.
Output Damping
Ringing is a common problem in any circuit with very fast
rise or fall times. Such ringing will be aggravated by long
inductive lines with capacitive loads. Techniques to reduce
ringing include:
Power Dissipation Calculation
The Power dissipation equation has three components:
Quiescent Power Dissipation, Power dissipation due to
Internal Parasitics and Power Dissipation because of the
Load Capacitor.
Power dissipation due to internal parasitics is usually the
most difficult to accurately quantitize. This is primarily due to
Crow-Bar current which is a product of both the high and low
drivers conducting effectively at the same time during driver
transitions. Design goals always target the minimum time for
this condition to exist. Given that how often this occurs is a
product of frequency, Crowbar effects can be characterized
as internal capacitance.
Lab tests are conducted with Driver Outputs disconnected
from any load. With design verification packaging, bond
wires are removed to aid in the characterization process.
Based on laboratory tests and simulation correlation of those
results, Equation 1 defines the ISL55110, ISL55111 Power
Dissipation per channel:
1. Reduce inductance by making printed circuit board traces
2. Reduce inductance by using a ground plane or by closely
3. Use small damping resistor in series with the output of the
4. Use good bypassing techniques to prevent supply
1. Where:
P
=
as short as possible.
coupling the output lines to their return paths.
ISL55110, ISL55111. Although this reduces ringing, it will
also slightly increase the rise and fall times.
voltage ringing.
3.3mA is the quiescent Current from the VDD. This forms
a small portion of the total calculation. When figuring two
VDD
CL
×
×
VH
3.3e-3
2
×
f
+
(Watts/Channel)
10pF
×
VDD
2
×
f
+
135pF
×
VH
2
March 17, 2011
× +
f
(EQ. 1)
FN6228.4

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