VN02N-E STMicroelectronics, VN02N-E Datasheet - Page 11

• Manufacturer Part Number: VN02N-E
• Description: IC SSR HI SIDE 60V PENTAWATT VRT
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN02N-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 400 mOhm
• Current - Peak Output: 6A
• Voltage - Supply: 7 V ~ 26 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: Pentawatt-5 (Vertical, Bent and Staggered Leads)
• Current, Output: 6 A @ 25 °C
• Delay, Propagation, Turn-off: 10 uA (Typ.) @ 3 A, 25
• Delay, Propagation, Turn-on: 10 uA (Typ.) @ 3 A, 25 °C
• Package Type: PENTAWATT Vertical
• Power Dissipation: 29 W
• Temperature, Ambient, Minimum: -55 °C
• Temperature, Junction, Maximum: 10 uA (Typ.) @ 3 A, 25
• Temperature, Range, Operating Ambient: -55 °C
• Temperature, Storage: 10 uA (Typ.) @ 3 A, 25
• Thermal Resistance, Junction To Ambient: 60 °C⁄W
• Time, Fall, Turn-off: 10 uA (Typ.) @ 3 A, 25
• Time, Rise, Turn-on: 15 uA (Typ.) @ 3 A, 25 °C
• Transistor Type: Integrated Power MOS
• Voltage, Supply: 26 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

VN02N
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
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