VN02N-E STMicroelectronics, VN02N-E Datasheet - Page 4

• Manufacturer Part Number: VN02N-E
• Description: IC SSR HI SIDE 60V PENTAWATT VRT
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN02N-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 400 mOhm
• Current - Peak Output: 6A
• Voltage - Supply: 7 V ~ 26 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: Pentawatt-5 (Vertical, Bent and Staggered Leads)
• Current, Output: 6 A @ 25 °C
• Delay, Propagation, Turn-off: 10 uA (Typ.) @ 3 A, 25
• Delay, Propagation, Turn-on: 10 uA (Typ.) @ 3 A, 25 °C
• Package Type: PENTAWATT Vertical
• Power Dissipation: 29 W
• Temperature, Ambient, Minimum: -55 °C
• Temperature, Junction, Maximum: 10 uA (Typ.) @ 3 A, 25
• Temperature, Range, Operating Ambient: -55 °C
• Temperature, Storage: 10 uA (Typ.) @ 3 A, 25
• Thermal Resistance, Junction To Ambient: 60 °C⁄W
• Time, Fall, Turn-off: 10 uA (Typ.) @ 3 A, 25
• Time, Rise, Turn-on: 15 uA (Typ.) @ 3 A, 25 °C
• Transistor Type: Integrated Power MOS
• Voltage, Supply: 26 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

VN02N
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (continued)
(*) The V
calculated to not exceed 10 mA at the input pin.
( ) Status determination > 100 s after the switching edge.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
temperature returns to about 125
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING THE DEVICE AGAINST REVER-
SE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
4/11
Symbol
V
S CL
T
t
I
I
I
T
TS D
S C
OV
AV
OL
R
( )
IH
is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor
Status Clamp Voltage
Switch-off Time in
Short Circuit Condition
at Start-Up
Over Current
Average Current in
Short Circuit
Open Load Current
Level
Thermal Shut-down
Temperature
Reset Temperature
Parameter
o
o
C. When the
C the switch is
I
I
R
R
R
STAT
STAT
LOA D
LOA D
LOA D
= 10 mA
= -10 mA
< 10 m
< 10 m
< 10 m
Test Conditions
T
-40
T
The consequences of the voltage drop across
this diode are as follows:
–
–
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of V
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
c
c
= 25
= 85
If the input is pulled to power GND, a negative
voltage of -V
thresholds and V
respect to power GND).
The undervoltage shutdown level is increased
by V
T
c
o
o
F
C
C
.
125
o
C
F
is seen by the device. (V
Min.
STAT
140
125
5
are increased by V
IH
, V
Typ.
-0.7
1.5
0.9
6
IL
and V
Max.
28
70
5
STAT
Unit
IL
mA
F
ms
o
o
takes
V
V
A
A
, V
C
C
with
IH