VND10BSPTR-E STMicroelectronics, VND10BSPTR-E Datasheet

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VND10BSPTR-E

Manufacturer Part Number
VND10BSPTR-E
Description
IC SMART PWR SSR 2CH POWERSO10
Manufacturer
STMicroelectronics
Type
High Sider
Datasheets

Specifications of VND10BSPTR-E

Input Type
Non-Inverting
Number Of Outputs
2
On-state Resistance
65 mOhm
Current - Output / Channel
3.4A
Current - Peak Output
14A
Voltage - Supply
6 V ~ 26 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
PowerSO-10 Exposed Bottom Pad
Switch Type
High Side
Power Switch Family
VND10B
Power Switch On Resistance
100mOhm
Output Current
14A
Mounting
Surface Mount
Supply Current
35uA
Package Type
PowerSO
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
12
Power Dissipation
75W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number:
VND10BSPTR-E
Manufacturer:
ST
0
DESCRIPTION
The VND10BSP is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded. This
device has two channels, and a common
diagnostic. Built-in thermal shut-down protects
the chip from over temperature and short circuit.
The status output provides an indication of open
load in on
overtemperature conditions and stuck-on to V
BLOCK DIAGRAM
March 1998
VND10BSP
OUTPUT CURRENT (CONTINUOUS):
14A @ T
5V LOGIC LEVEL COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE PROTECTION
OPEN DRAIN DIAGNOSTIC OUTPUT
INDUCTIVE LOAD FAST
DEMAGNETIZATION
VERY LOW STAND-BY POWER
DISSIPATION
T YPE
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
c
= 85
V
40 V
state, open load in off state,
DSS
o
C PER CHANNEL
R
0.1
DS( on
)
3.4 A
I
OUT
26 V
V
CC
CC
.
10
PowerSO-10
VND10BSP
1
1/9

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VND10BSPTR-E Summary of contents

Page 1

ISO HIGH SIDE SMART POWER SOLID STATE RELAY T YPE DSS DS( on OUT VND10BSP 40 V 0.1 3.4 A OUTPUT CURRENT (CONTINUOUS): o 14A @ PER CHANNEL c 5V LOGIC LEVEL ...

Page 2

VND10BSP ABSOLUTE MAXIMUM RATING Symb ol V Drain-Source Breakdown Voltage (BR)DSS I Output Current (cont OUT I (RMS) RMS Output Current at T OUT I Reverse Output Current Input Current IN -V Reverse Supply ...

Page 3

THERMAL DATA R Thermal Resistance Junction-case t hj- Thermal Resistance Junction-ambient ($) t hj- amb ($) When mounted using minimum recommended pad size on FR-4 board ELECTRICAL CHARACTERISTICS (8 < V POWER Symb ol Parameter V Supply Voltage ...

Page 4

VND10BSP ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS Symb ol Parameter V Status Voltage Output STAT Low V Under Voltage Shut USD Down V Status Clamp Voltage SCL T Thermal Shut-down TSD Temperature T Thermal Shut-down SD(hys t.) Hysteresis T Reset ...

Page 5

Switching Time Waveforms FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open load in on-state, open load in off-state, over temperature conditions and stuck- From the falling edge of the input signal, the status ...

Page 6

VND10BSP TRUTH TABLE Normal Operation Under-voltage T hermal Shutdown Channel 1 Channel 2 O pen Load Channel 1 Channel 2 O utput Shorted to V Channel 1 CC Channel 2 (**) with additional external resistor. Figure 1: Waveforms 6/9 INPUT ...

Page 7

Figure 2: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 3: Typical Application Circuit With Separate Signal Ground VND10BSP 7/9 ...

Page 8

VND10BSP Power SO-10 MECHANICAL DATA DIM. MIN. TYP. A 3.35 A1 0.00 B 0.40 c 0.35 D 9.40 D1 7.40 E 9.30 E1 7.20 E2 7.20 E3 6.10 E4 5.90 e 1.27 F 1.25 H 13.80 h 0.50 L 1.20 ...

Page 9

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its ...

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