IPS521G International Rectifier, IPS521G Datasheet - Page 2

• Manufacturer Part Number: IPS521G
• Description: IC MOSFET HS PWR SW 5A 8-SOIC
• Manufacturer: International Rectifier
• Type: High Sider

Specifications of IPS521G

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 80 mOhm
• Current - Output / Channel: 1.6A
• Current - Peak Output: 10A
• Voltage - Supply: 5.5 V ~ 35 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Leakage, Offset: 50 mA
• Current, Supply: 1.6 A
• Package Type: SOIC-8
• Polarization: N-Channel
• Power Dissipation: 1 W
• Resistance, Drain To Source On: 100 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –40 °C
• Thermal Resistance, Junction To Ambient: 125 °C/W
• Time, Turn-off Delay: 35 ms
• Time, Turn-on Delay: 10 ms
• Voltage, Input: 7 V
• Voltage, Input, High Level: 5.5 V
• Voltage, Input, Low Level: 0.9 V
• Voltage, Supply: 65 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IPS521G

IPS521G
Thermal Characteristics
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (T j = 25
Symbol Parameter
R th1
R th2
Symbol Parameter
V cc
V IH
V IL
I out
R in
R dg
Symbol Parameter
V out
V offset
V in
I in, max
V dg
I dg, max
I sd
I sd
ESD1
ESD2
P d
T j max.
Vcc max.
Tc=85
2
cont.
pulsed
o
C
Thermal resistance with standard footprint
Thermal resistance with 1" square footprint
Continuous V cc voltage
High level input voltage
Low level input voltage
Continuous output current
Recommended resistor in series with IN pin
Recommended resistor in series with DG pin
Maximum output voltage
Maximum logic ground to load ground offset V cc -50
Maximum Input voltage
Maximum positive IN current
Maximum diagnostic output voltage
Maximum diagnostic output current
Diode max. permanent current
Diode max. pulsed current
Electrostatic discharge voltage
Electrostatic discharge voltage
Maximum power dissipation
Max. storage & operating junction temp.
Maximum Vcc voltage
( TAmbient = 85
(rth = 125
(rth=125
o
C, Tj = 125
(1)
(1)
o
(Machine Model)
C/W)
o
(Human Body)
o
(1)
C/W)
C unless otherwise specified).
o
C, R th = 100
V cc -50
Min.
Min.
-0.3
-0.3
-40
—
—
—
—
—
—
-5
-1
—
—
o
C/W)
V cc +0.3
V cc +0.3
Typ.
Max.
+150
5.5
5.5
1.4
0.5
10
10
10
50
4
1
Max. Units Test Conditions
Units
mA
mA
o
W
V
V
A
kV
C
V
o
C/W
C=100pF, R=1500
C=200pF, R=0
-0.3
8 Lead SOIC
Min.
5.5
—
4
10
Test Conditions
4
Max.
5.5
0.9
1.6
35
6
20
L=10 H
www.irf.com
Units
k
A
V