IRSF3010S International Rectifier, IRSF3010S Datasheet - Page 11

• Manufacturer Part Number: IRSF3010S
• Description: IC FET SMART SW 50V 11A D2PAK
• Manufacturer: International Rectifier
• Type: High Side/Low Side Driverr

Specifications of IRSF3010S

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 70 mOhm
• Current - Output / Channel: 14A
• Current - Peak Output: 20A
• Voltage - Supply: 1.5 V ~ 10 V
• Operating Temperature: -55°C ~ 155°C
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRSF3010S

Over-current Protection
When the drain current exceeds the preset limit the
protection circuit resets the internal flip-flop and turns
Q1 off. The normal operation can be restored by hold-
ing the input voltage below the specified threshold level
(approx. 1.3V) for the specified minimum t reset time.
The typical waveforms at 7V input voltage are shown
in figure 22. In typical switching applications, below
40kHz, the difference in switching losses between the
IRSF3010 and the same size standard MOSFET is
negligible.
Fig. 23 Waveforms at over-current shut-down
Fig. 22 Switching waveforms with 7V Input
Drain Current: 2A/div.
IR FAR EAST: 171 (K&H Bldg.), 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: [phone]
Input voltage 5V/div.
Time: 10 sV/div.
Input voltage 5V/
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: [phone]
Time: 1 sV/div.
Drain voltage 5V/
Drain Current: 1A/
Drain voltage 5V/div.
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
voltage
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: [phone]
http://www.irf.com/
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
Data and specifications subject to change without notice.
Over-voltage Protection
When the drain to source voltage exceeds 55V the
zener diode between gate and drain turns the
IRSF3010 on, before the breakdown voltage of the
drain-source diode is reached. This greatly enhances
the energy the device can withstand safely during turn-
off of inductive loads compared to avalanche break-
down. Thus the device can be used for fast de-
energization of inductive loads. The absorbed energy
is limited only by the maximum junction temperature.
The typical waveforms at over-current shut-down are
shown in figure 23. After turn-on the current in the
inductor at the drain starts ramping up. At about 15A
the over-current protection shuts down the device.
Over-temperature Protection
Figure 24 illustrates the operation of the over-tempera-
ture protection. The IRSF3010 switches a 1
tive load to a 12V power supply. When the thermal
balance is established the junction temperature is lim-
ited on pulse by pulse basis.
Input voltage 10V/div.
Fig. 24 Over-temperature shut-down
Time: 10 sV/div.
Drain Current: 2A/div.
Drain voltage 5V/div.
resis-
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