NID9N05CL ON Semiconductor, NID9N05CL Datasheet

MOSFET N-CH CLAMP 9A 52V DPAK

NID9N05CL

Manufacturer Part Number
NID9N05CL
Description
MOSFET N-CH CLAMP 9A 52V DPAK
Manufacturer
ON Semiconductor
Type
Low Sider
Datasheet

Specifications of NID9N05CL

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
153 mOhm
Current - Peak Output
9A
Operating Temperature
-55°C ~ 175°C
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Voltage - Supply
-
Current - Output / Channel
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NID9N05CL
Manufacturer:
ON
Quantity:
12 500
Part Number:
NID9N05CLT4
Manufacturer:
ON
Quantity:
12 500
Part Number:
NID9N05CLT4G
Manufacturer:
ON
Quantity:
2 500
Part Number:
NID9N05CLT4G
Manufacturer:
ON
Quantity:
12 500
NID9N05CL
Power MOSFET
9.0 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ESD Protection
in a DPAK Package
Benefits
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in
2. When surface mounted to a FR4 board using minimum recommended pad
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 8
MAXIMUM RATINGS
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ T
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
R
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 seconds
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
High Energy Capability for Inductive Loads
Low Switching Noise Generation
Diode Clamp Between Gate and Source
ESD Protection − HBM 5000 V
Active Over−Voltage Gate to Drain Clamp
Scalable to Lower or Higher R
Internal Series Gate Resistance
Pb−Free Packages are Available
Automotive and Industrial Markets:
G
size, (Cu area 0.412 in
DD
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
= 25 W)
= 50 V, I
D(pk)
− Single Pulse (t
Rating
= 1.5 A, V
J
= 125°C
2
(T
).
J
A
= 25°C unless otherwise noted)
GS
= 25°C
p
A
= 10 ms)
= 10 V,
= 25°C
DS(on)
Symbol
T
V
R
R
R
J
V
E
I
P
, T
DSS
T
I
DM
qJC
qJA
qJA
GS
AS
D
D
L
stg
−55 to 175
52−59
Value
1.74
±15
160
100
260
9.0
5.2
35
72
1
°C/W
Unit
mJ
°C
°C
W
V
V
A
2
).
(Pin 1)
†For information on tape and reel specifications,
NID9N05CLT4
NID9N05CLT4G
NID9N05CL
NID9N05CLG
Gate
Y
WW
D9N05CL = Device Code
G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Clamped)
V
52 V
Device
CASE 369C
DSS
STYLE 2
ESD Protection
DPAK
ORDERING INFORMATION
= Year
= Work Week
= Pb−Free Package
R
G
http://onsemi.com
(Pb−Free)
(Pb−Free)
R
Overvoltage
Package
Protection
DS(ON)
DPAK
DPAK
DPAK
DPAK
90 mW
Publication Order Number:
1
3
TYP
2
2500/Tape & Reel
2500/Tape & Reel
MARKING
DIAGRAM
75 Units/Rail
75 Units/Rail
Shipping
05CLG
NID9N05CL/D
YWW
1 = Gate
2 = Drain
3 = Source
4 = Drain
D9N
(Limited)
I
(Pins 2, 4)
D
9.0 A
Source
(Pin 3)
Drain
MAX
M
PWR
4

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NID9N05CL Summary of contents

Page 1

... R 72 qJA R 100 qJA T 260 °C L NID9N05CLT4 NID9N05CLT4G 2 ). NID9N05CL NID9N05CLG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com V I MAX DSS D (Limited) R TYP DS(ON) ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 1.0 mA 25° 1.0 mA −40°C to 125° ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Gate Charge (V ...

Page 4

6 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.5 0.4 0.3 ...

Page 5

TOTAL GATE CHARGE (nC) g Figure 8. Gate−To−Source and Drain−To−Source Voltage versus ...

Page 6

The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...

Page 7

... V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NID9N05CL/D ...

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