NID9N05CL ON Semiconductor, NID9N05CL Datasheet - Page 6

• Manufacturer Part Number: NID9N05CL
• Description: MOSFET N-CH CLAMP 9A 52V DPAK
• Manufacturer: ON Semiconductor
• Type: Low Sider

Specifications of NID9N05CL

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 153 mOhm
• Current - Peak Output: 9A
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Voltage - Supply: -
• Current - Output / Channel: -

the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance −
General Data and Its Use.”
traverse any load line provided neither rated peak current
(I
transition time (t
power averaged over a complete switching cycle must not
exceed (T
in switching circuits with unclamped inductive loads. For
DM
The Forward Biased Safe Operating Area curves define
Switching between the off−state and the on−state may
A Power MOSFET designated E−FET can be safely used
) nor rated voltage (V
0.01
1.0
0.1
0.00001
J(MAX)
0.01
D = 0.5
0.05
0.2
0.1
SINGLE PULSE
r
,t
− T
f
) do not exceed 10 ms. In addition the total
C
)/(R
qJC
0.0001
).
DSS
100
0.1
10
1
) is exceeded and the
0.1
V
SINGLE PULSE
T
C
GS
Figure 11. Maximum Rated Forward Biased
= 25°C
V
= 12 V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.001
Figure 12. Thermal Response
SAFE OPERATING AREA
C
) of 25°C.
Safe Operating Area
http://onsemi.com
1
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
t, TIME (s)
LIMIT
P
6
(pk)
0.01
DUTY CYCLE, D = t
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
drain−to−source avalanche at currents up to rated pulsed
current (I
continuous current (I
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous I
equal the values indicated.
10 ms
Although many E−FETs can withstand the stress of
t
1
10
t
2
DM
100 ms
1 ms
10 ms
), the energy rating is specified at rated
dc
0.1
1
/t
2
D
100
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
), in accordance with industry custom.
J(pk)
qJC
(t) = r(t) R
− T
C
= P
D
qJC
(pk)
can safely be assumed to
1
1
R
qJC
(t)
10