LT3585EDDB-2#TRPBF Linear Technology, LT3585EDDB-2#TRPBF Datasheet - Page 12

• Manufacturer Part Number: LT3585EDDB-2#TRPBF
• Description: IC CHARGER PHOTOFLASH 10-DFN
• Manufacturer: Linear Technology

Specifications of LT3585EDDB-2#TRPBF

• Applications: Photoflash Capacitor Charger, Xenon
• Current - Supply: 5mA
• Voltage - Supply: 1.5 V ~ 16 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 10-DFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

It is important not to minimize the leakage inductance to
a very low level. Although this would result in a very low
leakage spike on the SW pin, the parasitic capacitance of the
transformer would become large. This will adversely affect
the charge time of the photofl ash circuit. Linear Technology
has worked with several leading magnetic component man-
ufacturers to produce predesigned fl yback transformers
for use with the LT3585-0 /LT3585-1/LT3585-2/LT3585-3.
Table 2 shows the details of several of these transformers.
LT3585-0/LT3585-1
LT3585-2/LT3585-3
APPLICATIO S I FOR ATIO
Table 2. Predesigned Transformers—Typical Specifi cations Unless Otherwise Noted
FOR USE
WITH
LT3585-1
LT3585-0/
LT3585-2
LT3585-1
LT3585-0
LT3585-1
LT3585-2
LT3585-3
LT3585-0
LT3585-1
LT3585-2
LT3585-3
12
V
SW
0V
10V/DIV
V
SW
Figure 5. New Transformer Design Check
V
V
Figure 4. LT3585 SW Voltage Waveform
A
BAT
OUT
LDT565620ST-203
TTRN-0530-000-T
TTRN-0530-012-T
TTRN-0530-021-T
TTRN-0530-022-T
LDT565630T-001
LDT565630T-002
LDT565630T-003
LDT565630T-041
TRANSFORMER
DESIGNATION
= 3.6V
= 320V
SBL-5.6S-1
SBL-5.6-1
U
B
100ns/DIV
U
(W × L × H) (mm)
5.6 × 8.5 × 3.0
5.6 × 8.5 × 4.0
5.8 × 5.8 × 2.0
5.8 × 5.8 × 3.0
5.8 × 5.8 × 3.0
5.8 × 5.8 × 3.0
5.8 × 5.8 × 3.0
5.0 × 5.0 × 3.0
5.0 × 5.0 × 3.0
5.0 × 5.0 × 3.0
5.0 × 5.0 × 3.0
SIZE
W
3585 F05
3585 F04
MUST BE
LESS THAN 60V
MUST BE
LESS THAN 50V
LPRI
(µH)
14.5
10.5
16.0
11.8
8.2
4.7
6.6
4.0
U
24
10
6
LPRI LEAKAGE
400 Max
200 Max
390 Max
200 Max
500 Max
550 Max
150 Max
200 Max
400 Max
300 Max
300 Max
(nH )
Output Diode Selection
The rectifying diode(s) should be low capacitance type
with suffi cient reverse voltage and forward current rat-
ings. The peak reverse voltage that the diode(s) will see
is approximately:
The peak current of the diode is simply:
For the circuit of Figure 8 with V
and I
is recommended for most applications. Table 3 shows
the various diodes and relevant specifi cations. Use the
appropriate number of diodes to achieve the necessary
reverse breakdown voltage.
Capacitor Selection
For the input bypass capacitors, high quality X5R or X7R
types should be used. Make sure the voltage capability of
the part is adequate.
V
I
I
I
I
PK SEC
PK SEC
PK SEC
PK SEC
PK(R)
PK(SEC)
(
(
(
(
10.2
10.2
10.2
10.4
10.2
10.2
10.4
10.3
10.3
10.3
10.3
N
= V
)
)
)
)
=
=
=
=
is 137mA. The GSD2004S dual silicon diode
OUT
N
N
1 4
0 7
2
1
N
N
370 Max
100 Max
240 Max
210 Max
128 Max
515 Max
256 Max
102 Max
.
.
90 Max
(mΩ)
R
305
103
(
(
+ (N • V
PRI
LT
LT
(
(
LT
LT3585 1 -
3585 3
3585 2
358
11.2 Max
16.5 Max
6.4 Max
BAT
10 Max
14 Max
28 Max
32 Max
37 Max
16 Max
-
-
5 5
R
(Ω)
55
26
SEC
-0
)
)
)
)
)
BAT
VENDOR
Kijima Musen
Hong Kong Offi ce
852-2489-8266
TDK
Chicago Sales Offi ce
[phone]
www.components.tdk.com
Tokyo Coil Engineering
Japan Offi ce
0426-56-6262
of 5V, V
PK(R)
is 371V
3585f