MAX8588ETM+T Maxim Integrated Products, MAX8588ETM+T Datasheet
MAX8588ETM+T
Specifications of MAX8588ETM+T
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MAX8588ETM+T Summary of contents
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... PDA, Palmtop, and Wireless Handhelds Third-Generation Smart Cell Phones Internet Appliances and Web-Books X-Scale is a trademark of Intel Corp. ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. High-Efficiency, Low-I ♦ Six Regulators in One Package Step-Down DC-DC for I ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones ABSOLUTE MAXIMUM RATINGS IN, IN45, IN6, MR, LBO, DBO, RSO, POK, SCL, SDA, BKBT, V7, SLP, SRAD, PWM3 to GND...............-0.3V to +6V REF, CC_, ON_, FB_, DBI, LBI, V1, V2, RAMP, BYP, ...
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Dynamic Core for PDAs and Smartphones ELECTRICAL CHARACTERISTICS (continued 3.6V 3.0V 1.1V BKBT LBI are +25°C.) A PARAMETER p-Channel On-Resistance n-Channel On-Resistance Current-Sense Transresistance p-Channel Current-Limit Threshold PWM Skip-Mode ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones ELECTRICAL CHARACTERISTICS (continued 3.6V 3.0V 1.1V BKBT LBI are +25°C.) A PARAMETER I p-Channel On-Resistance I I n-Channel On-Resistance I Current-Sense ...
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Dynamic Core for PDAs and Smartphones ELECTRICAL CHARACTERISTICS (continued 3.6V 3.0V 1.1V BKBT LBI are +25°C.) A PARAMETER LBI Threshold (Falling) DBI Threshold (Falling) RSO Threshold (Falling) RSO Deassert ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones ELECTRICAL CHARACTERISTICS (V = 3.6V 3.0V 1.1V BKBT LBI PARAMETER PV1, PV2, PV3, SLPIN, IN Supply Voltage Range IN45, IN6 Supply Voltage Range IN Undervoltage-Lockout (UVLO) ...
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Dynamic Core for PDAs and Smartphones ELECTRICAL CHARACTERISTICS (continued 3.6V 3.0V 1.1V BKBT LBI PARAMETER SYNCHRONOUS-BUCK PWM REG3 REG3 Output Voltage Accuracy p-Channel On-Resistance n-Channel On-Resistance p-Channel Current-Limit Threshold OUT3 Maximum Output ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones ELECTRICAL CHARACTERISTICS (continued 3.6V 3.0V 1.1V BKBT LBI PARAMETER DBI Threshold (Falling) Hysteresis is 5% (typ) RSO Threshold (Falling) Voltage on REG7, hysteresis is ...
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Dynamic Core for PDAs and Smartphones ELECTRICAL CHARACTERISTICS (continued) Note 1: Dropout voltage is guaranteed by the p-channel switch resistance and assumes a maximum inductor resistance of 45mΩ. Note 2: The PWM-skip-mode transition has approximately 10mA of hysteresis. Note 3: ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones (Circuit of Figure 3.6V +25°C, unless otherwise noted REG1 3.3V OUTPUT EFFICIENCY vs. LOAD CURRENT 100 4.0V IN ...
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Dynamic Core for PDAs and Smartphones (Circuit of Figure 3.6V +25°C, unless otherwise noted DROPOUT VOLTAGE vs. LOAD CURRENT 300 250 200 150 100 REG1 3.3V OUTPUT 200 400 600 ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones (Circuit of Figure 3.6V +25°C, unless otherwise noted REG3 SWITCHING WAVEFORMS WITH 250mA LOAD V3 V LX3 I L3 400ns/div REG3 FORCED-PWM SWITCHING WAVEFORMS WITH ...
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Dynamic Core for PDAs and Smartphones (Circuit of Figure 3.6V +25°C, unless otherwise noted REG1 LOAD-TRANSIENT RESPONSE 200µs/div REG3 LOAD-TRANSIENT RESPONSE 200µs/div ______________________________________________________________________________________ High-Efficiency, Low-I Typical Operating Characteristics (continued) MAX8588 toc20 V1 100mV/div ...
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... PWM3 or connect high for forced-PWM operation at all loads for V3 only. LBO 15 Low-Battery Output. Open-drain output that goes low when IN is below the threshold set by LBI. Dual Mode is a trademark of Maxim Integrated Products, Inc. 14 ______________________________________________________________________________________ PMIC with Q FUNCTION when ON1 is low out of regulation. ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones PIN NAME REG2 Power Input. Bypass to PG2 with a 4.7µF or greater low-ESR capacitor. PV1, PV2, PV3, and IN must 16 PV2 connect together externally. 17 LX2 REG2 Switching Node. Connects ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones PIN NAME Serial Address Bit. SRAD allows the serial address to be changed in case it conflicts with another serial 35 SRAD device. If SRAD = GND SRAD ...
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Dynamic Core for PDAs and Smartphones BATT MAIN BATT DBI (3.15V OR ADJ) LBI (3.6V OR ADJ) REF LBO OPEN-DRAIN LOW-BATT OUT DBO OPEN-DRAIN DEAD-BATT OUT TO nBATT_FAULT ON1 FROM CPU SYS_EN ON2 SLP RUN SLEEP BKBT Li+ BACKUP BATTERY ...
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... See Figure 1. V1 and V2 (VCC_IO, VCC_MEM) Step-Down DC-DC Converters 1MHz current-mode step-down converter. The V1 output voltage can be preset to 3.3V or adjusted using a resistor voltage-divider. V1 supplies loads up to 1300mA. Idle Mode is a trademark of Maxim Integrated Products, Inc. 18 ______________________________________________________________________________________ PMIC with also a 1MHz current-mode step-down converter. ...
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Dynamic Core for PDAs and Smartphones V3 (VCC_CORE) Step-Down 1MHz current-mode step-down converter. It sup- plies loads up to 500mA. 2 The V3 output is set by the I C serial interface to between 0.7V and 1.475V ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones Voltage Monitors, Reset, and Undervoltage-Lockout Functions Undervoltage Lockout When the input voltage is below 2.35V (typ), an under- voltage-lockout (UVLO) circuit disables the IC. The inputs remain high impedance while in UVLO, ...
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Dynamic Core for PDAs and Smartphones MAIN BATTERY 334kΩ 500kΩ DBI (1.232V THRESHOLD) R5 LBI (1.00V THRESHOLD) 200kΩ R7 200kΩ Figure 4. Setting the Low-Battery and Dead-Battery Thresholds with Separate Resistor-Dividers. The values shown set a DBI ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones Table 2. V3 and V6 Serial Programming Codes PROG PROG ...
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Dynamic Core for PDAs and Smartphones LOW HIGH SCL SDA t t SU:STA HD:STA A = START CONDITION B = MSB OF ADDRESS CLOCKED INTO SLAVE C = LSB OF ADDRESS CLOCKED INTO SLAVE D = ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones A useful approximation is that it takes approximately 2.2 RC time constants for V3 to move from 10% to 90% of the voltage difference. For C RAMP is 330µs. For a 1V ...
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Dynamic Core for PDAs and Smartphones If the capacitor has significant ESR, the output ripple component due to capacitor ESR is RIPPLE(ESR) L(PEAK) Output capacitor specifics are also discussed in the Compensation and Stability section. Compensation and ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones BATT MAIN BATT TO BATT TO V1 C19 R19 R20 0.1µF 1MΩ 1MΩ LOW-BATT WARNING TO CPU nBATT_FAULT FROM CPU SYS_EN RUN SLEEP Li+ C25 BACKUP 1µF BATTERY V7, VCC_BATT (ALWAYS ON) ...
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Dynamic Core for PDAs and Smartphones Note that the pole cancellation does not have to be exact need only be within 0.75 to 1.25 times This provides flexibility in component LOAD ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones MAIN IN POWER 4.7µF D1 1N4148 BKBT V7 1µF Figure 8. BKBT connection when no backup battery is used alternate backup scheme, not involving the MAX8588, is used. MAIN ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones Pin Configuration TOP VIEW LB1 1 2 CC1 FB1 3 BKBT MAX8588ETM SLPIN 7 V2 ...
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High-Efficiency, Low-I Dynamic Core for PDAs and Smartphones (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information www.maxim-ic.com/packages.) D D/2 30 ______________________________________________________________________________________ PMIC with Q E/2 (NE-1) ...
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... Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 31 © 2005 Maxim Integrated Products ...