AN8049SH-E1 Panasonic - SSG, AN8049SH-E1 Datasheet - Page 12

• Manufacturer Part Number: AN8049SH-E1
• Description: IC MULTI CONFIG 40MA SSOP24D
• Manufacturer: Panasonic - SSG
• Type: Step-Down (Buck), Step-Up (Boost), Invertingr

Specifications of AN8049SH-E1

• Internal Switch(s): Yes
• Synchronous Rectifier: No
• Number Of Outputs: 3
• Current - Output: 40mA
• Frequency - Switching: 20kHz ~ 1MHz
• Voltage - Input: 1.8 ~ 14 V
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 24-SSOP
• Power - Output: 146mW
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Voltage - Output: -
• Other names: AN8049SHE1; AN8049SHE1TR

AN8049SH
I Usage Notes (continued)
I Application Notes
12
[3] Notes on MOS drive
[1] P
require care if this device is used to drive n-channel MOS transistors directly.
1. Use an n-channel MOS transistor with a low input capacitance.
2. Use an n-channel MOS transistor with a low gate-threshold voltage.
Since the AN8049SH channel 1 and 2 output circuits were designed to drive bipolar transistors, the following points
a circuit structure that can provide a constant-current (50 mA maxi-
mum) output source current. Furthermore, it has a sink current capac-
ity of 80 mA maximum. This means that designs must be concerned
about increased loss due to longer rise- and fall-times. If a problem
occurs, an inverter may be inserted as shown in figure 1 to provide
amplification.
voltage is V
adequately low on-resistance must be used. Also, if a large V
required, one solution is to use a transformer as shown in figure 2,
and apply a voltage that is twice the input voltage to the IC's V
D
 T
The AN8049SH is designed to drive bipolar transistors, and adopts
Since the AN8049SH OUT1 and OUT2 pin high-level output
a
curves of SSOP024-P-0300A
CC
− 1.0 V (minimum), low V
700
658
600
500
400
366
300
263
200
146
100
0
0
25
Ambient temperature T
T
MOS transistors with an
SDH00012BEB
50
P
Glass epoxy printed circuit board
(75 × 75 × t1.6 mm
R
P
D
D
th(j−a)
= 658 mW(25°C)
 T
= 152°C/W
75 85
a
Independent IC
without a heat sink
R
P
D
th(j−a)
a
= 366 mW(25°C)
(°C)
CC
= 273°C/W
3
)
100
GS
pin.
is
125
Figure 2. Gate drive voltage bootstrap
OUT1/2
OUT1/2
Figure 1. Output bootstrap circuit
V
V
V
IN
IN
CC
V
CC
≈ 2 × V
technique
IN
− VD
V
V
OUT
OUT