LT1956EGN Linear Technology, LT1956EGN Datasheet - Page 18
![IC SW REG STP-DWN HI VOLT 16SSOP](/photos/6/59/65965/161-16-ssop_sml.jpg)
LT1956EGN
Manufacturer Part Number
LT1956EGN
Description
IC SW REG STP-DWN HI VOLT 16SSOP
Manufacturer
Linear Technology
Type
Step-Down (Buck)r
Datasheet
1.LT1956EGNPBF.pdf
(28 pages)
Specifications of LT1956EGN
Internal Switch(s)
Yes
Synchronous Rectifier
No
Number Of Outputs
1
Voltage - Output
1.2 ~ 45 V
Current - Output
1.5A
Frequency - Switching
500kHz
Voltage - Input
5.5 ~ 60 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
16-SSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Power - Output
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LT1956EGN
Manufacturer:
LT
Quantity:
10 000
Part Number:
LT1956EGN
Manufacturer:
LINEAR/凌特
Quantity:
20 000
Part Number:
LT1956EGN#PBF
Manufacturer:
LINEAR/凌特
Quantity:
20 000
Part Number:
LT1956EGN#TRPBF
Manufacturer:
LINEAR/凌特
Quantity:
20 000
Company:
Part Number:
LT1956EGN-5
Manufacturer:
LT
Quantity:
10 000
Part Number:
LT1956EGN-5#PBF
Manufacturer:
LINEAR/凌特
Quantity:
20 000
Part Number:
LT1956EGN-5#TRPBF
Manufacturer:
LINEAR/凌特
Quantity:
20 000
LT1956/LT1956-5
APPLICATIO S I FOR ATIO
Board layout also has a significant effect on thermal resis-
tance. For the GN package, Pins 1, 8, 9 and 16, GND, are
a continuous copper plate that runs under the LT1956 die.
This is the best thermal path for heat out of the package.
Reducing the thermal resistance from Pins 1, 8, 9 and 16
onto the board will reduce die temperature and increase
the power capability of the LT1956. This is achieved by
providing as much copper area as possible around these
pins. Adding multiple solder filled feedthroughs under and
around these four corner pins to the ground plane will also
help. Similar treatment to the catch diode and coil termi-
nations will reduce any additional heating effects. For the
FE package, the exposed pad should be soldered to the
copper ground plane underneath the device.
PARASITIC RESONANCE
Resonance or “ringing” may sometimes be seen on the
switch node (see Figure 7). Very high frequency ringing
following switch rise time is caused by switch/diode/input
capacitor lead inductance and diode capacitance. Schot-
tky diodes have very high “Q” junction capacitance that
can ring for many cycles when excited at high frequency.
If total lead length for the input capacitor, diode and switch
path is 1 inch, the inductance will be approximately 25nH.
At switch off, this will produce a spike across the NPN
output device in addition to the input voltage. At higher
currents this spike can be in the order of 10V to 20V or
higher with a poor layout, potentially exceeding the abso-
lute max switch voltage. The path around switch, catch
diode and input capacitor must be kept as short as
possible to ensure reliable operation. When looking at this,
18
2V/DIV
Figure 7. Switch Node Resonance
SW RISE
U
50ns/DIV
U
SW FALL
W
1956 F07
U
a >100MHz oscilloscope must be used, and waveforms
should be observed on the leads of the package. This
switch off spike will also cause the SW node to go below
ground. The LT1956 has special circuitry inside which
mitigates this problem, but negative voltages over 0.8V
lasting longer than 10ns should be avoided. Note that
100MHz oscilloscopes are barely fast enough to see the
details of the falling edge overshoot in Figure 7.
A second, much lower frequency ringing is seen during
switch off time if load current is low enough to allow the
inductor current to fall to zero during part of the switch off
time (see Figure 8). Switch and diode capacitance resonate
with the inductor to form damped ringing at 1MHz to 10
MHz. This ringing is not harmful to the regulator and it has
not been shown to contribute significantly to EMI. Any
attempt to damp it with a resistive snubber will degrade
efficiency.
THERMAL CALCULATIONS
Power dissipation in the LT1956 chip comes from four
sources: switch DC loss, switch AC loss, boost circuit
current, and input quiescent current. The following formu-
las show how to calculate each of these losses. These
formulas assume continuous mode operation, so they
should not be used for calculating efficiency at light load
currents.
Switch loss:
P
SW
0.2A/DIV
10V/DIV
R
V
V
L = 15 H
IN
OUT
SW OUT
Figure 8. Discontinuous Mode Ringing
= 25V
= 5V
I
V
IN
2
V
OUT
500ns/DIV
t
EFF
( / )
1 2
I
1956 F08
OUT
SWITCH NODE
VOLTAGE
INDUCTOR
CURRENT AT
I
OUT
V
= 0.1A
IN
1956f
f