HCPL-0302-560E Avago Technologies US Inc., HCPL-0302-560E Datasheet - Page 8

• Manufacturer Part Number: HCPL-0302-560E
• Description: OPTOCOUPLER 1CH 0.4A VDE 8-SOIC
• Manufacturer: Avago Technologies US Inc.

Specifications of HCPL-0302-560E

• Voltage - Isolation: 3750Vrms
• Number Of Channels: 1, Unidirectional
• Current - Output / Channel: 400mA
• Propagation Delay High - Low @ If: 200ns @ 7mA
• Current - Dc Forward (if): 20mA
• Input Type: DC
• Output Type: Push-Pull, Totem-Pole
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• No. Of Channels: 1
• Optocoupler Output Type: Gate Drive
• Input Current: 12mA
• Output Voltage: 30V
• Opto Case Style: SOIC
• No. Of Pins: 8
• Peak Reflow Compatible (260 C): Yes
• Isolation Voltage: 3.75kV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package Characteristics
Parameter
Input-Output Momentary
Withstand Voltage
Input-Output Resistance
Input-Output Capacitance
Notes:
1. Derate linearly above 70°C free air temperature at a rate of 0.3 mA/°C.
2. Maximum pulse width = 10 µs, maximum duty cycle = 0.2%. This value is intended to allow for component tolerances for designs with I
3. Derate linearly above 85°C, free air temperature at the rate of 4.0 mW/°C.
4. Input power dissipation does not require derating.
5. Maximum pulse width = 50 µs, maximum duty cycle = 0.5%.
6. In this test, V
7. Maximum pulse width = 1 ms, maximum duty cycle = 20%.
8. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage >4500 V
9. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together.
10. PDD is the difference between t
11. Common mode transient immunity in the high state is the maximum tolerable |dV
12. Common mode transient immunity in a low state is the maximum tolerable |dV
13. This load condition approximates the gate load of a 1200 V/20 A IGBT.
14. The power supply current increases when operating frequency and C
Figure 1. V
8
minimum = 0.2 A. See Application section for additional details on limiting I
tion current limit I
60747-5-2 Insulation Characteristics Table, if applicable.
output will remain in the high state (i.e. V
will remain in a low state (i.e. V
-0.5
-1.0
-1.5
-2.0
-2.5
0
-50
-25
OH
T
vs. temperature.
A
0
OH
– TEMPERATURE – C
is measured with a DC load current. When driving capacitive load V
25
I-O
< 5 µA). This test is performed before 100% production test for partial discharge (method B) shown in the IEC/EN/DIN EN
50
75
100
O
PHL
< 1.0 V).
125
and t
Symbol
PLH
O
V
R
C
> 6.0 V).
ISO
I-O
I-O
between any two parts or channels under the same test conditions.
Figure 2. V
-1
-2
-3
-4
0
Min.
0
3750
OH
I
OH
vs. I
– OUTPUT HIGH CURRENT – A
Typ. Max.
10
0.6
OH
12
.
g
of the driven IGBT increases.
0.2
OL
CM
peak.
/dt| of the common mode pulse, V
OH
Units
CM
V
Ω
pF
will approach V
/dt| of the common mode pulse V
rms
0.4
Figure 3. V
Test Conditions
T
V
Freq = 1 MHz
A
I-O
= 25°C, RH < 50%
0.44
0.43
0.42
0.41
0.40
0.39
CC
= 500 V
-50
as I
OH
OL
-25
rms
approaches zero amps.
vs. temperature.
T
for 1 second (leakage detec-
A
CM
0
– TEMPERATURE – C
, to assure that the output
25
CM
to assure that the
50
Fig. Note
75
8, 9
9
100
O
peak
125