4N38M Fairchild Optoelectronics Group, 4N38M Datasheet
4N38M
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4N38M Summary of contents
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... CATHODE 2 3 N/C ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 General Description The 4N38M, H11DXM and MOC8204M are photo- transistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high = 300V voltage NPN silicon phototransistor. The device is sup- plied in a standard plastic six-pin dual-in-line package ...
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... Collector to Emitter Voltage CER V Collector Base Voltage CBO V Emitter to Collector Voltage ECO I Collector Current (Continuous) C Note: 1. Parameters meet or exceed JEDEC registered data (for 4N38M only). ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 Parameter = 25°C A (1) (1) (1) (1) = 25° 25° ...
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... SWITCHING TIMES t Non-Saturated ON Turn-on Time t Turn-off Time OFF *All Typical values 25°C A Note: 2. Parameters meet or exceed JEDEC registered data (for 4N38M only). ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0 25°C unless otherwise specified.) A Test Conditions I = 10mA 10µA ...
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... IORM V Highest Allowable Over Voltage IOTM External Creepage External Clearance Insulation Thickness RIO Insulation Resistance at Ts, V ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 (Continued 25°C unless otherwise specified.) A Test Conditions Device f = 60Hz sec. All V = 500 VDC All ...
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... Fig. 5 Normalized Dark Current vs. Ambient Temperature Normalized to 100V 10000 25˚C A 1000 V = 100V CE 100 50V – AMBIENT TEMPERATURE (˚C) A ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0 -55˚ 25˚C 0 100˚C A 100 1 0.1 10 -60 Fig. 6 Normalized Collector-Base Current vs. Temperature 300V ...
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... Note: All dimensions in mm. ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 0.4" Lead Spacing 6.10–6.60 7.62 (Typ.) 5.08 (Max.) 0.38 (Min.) 0.20–0.30 15° (Typ.) (0.86) 1.02– ...
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... SR2V Marking Information Definitions ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 Order Entry Identifier (Example) H11D1M Standard Through Hole Device (50 units per tube) H11D1SM Surface Mount Lead Bend H11D1SR2M Surface Mount; Tape and Reel H11D1TM 0.4" Lead Spacing ...
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... C 140 120 100 ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 12.0 0.1 2.0 0.05 0.05 4.0 0.1 10.1 0.20 183 Sec 1.822 C/Sec Ramp up rate 33 Sec 60 120 180 Time (s) 8 Ø1.5 MIN 1 ...
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... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...