MOCD213M Fairchild Optoelectronics Group, MOCD213M Datasheet

OPTOCOUPLER TRANS-OUT 2CH 8-SOIC

MOCD213M

Manufacturer Part Number
MOCD213M
Description
OPTOCOUPLER TRANS-OUT 2CH 8-SOIC
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of MOCD213M

Number Of Channels
2
Input Type
DC
Voltage - Isolation
2500Vrms
Current Transfer Ratio (min)
100% @ 10mA
Voltage - Output
70V
Current - Output / Channel
150mA
Current - Dc Forward (if)
60mA
Vce Saturation (max)
400mV
Output Type
Transistor
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Transfer Ratio (max)
-
Other names
MOCD213-M
MOCD213-MQT
MOCD213-MQT
MOCD213QT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MOCD213M
Manufacturer:
Fairchil
Quantity:
34 000
Price:
©2005 Fairchild Semiconductor Corporation
MOCD213M Rev. 1.0.1
MOCD213M
Dual Channel Phototransistor Small Outline
Surface Mount Optocouplers
Features
Applications
Schematic
U.L. recognized (File #E90700, Volume 2)
VDE recognized (File #136616) (add option “V” for
VDE approval, i.e, MOCD213VM)
Dual channel coupler
Convenient plastic SOIC-8 surface mountable
package style
Minimum current transfer ratio 100% with input current
of 10mA
Minimum BV
Standard SOIC-8 footprint, with 0.050" lead spacing
Compatible with dual wave, vapor phase and
IR reflow soldering
High input-output isolation of 2500 V
guaranteed
Feedback control circuits
Interfacing and coupling systems of different
potentials and impedances
General purpose switching circuits
Monitor and detection circuits
CATHODE 1
CATHODE 2
ANODE 1
ANODE 2
CEO
1
2
3
4
of 70 Volts guaranteed
AC(rms)
8
7
6
5
COLLECTOR 1
EMITTER 1
COLLECTOR 2
EMITTER 2
Description
The MOCD213M device consists of two gallium arsenide
infrared emitting diodes optically coupled to two mono-
lithic silicon phototransistor detectors, in a surface
mountable, small outline plastic package. It is ideally
suited for high density applications and eliminates the
need for through-the-board mounting.
www.fairchildsemi.com
April 2009

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MOCD213M Summary of contents

Page 1

... Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 Description The MOCD213M device consists of two gallium arsenide infrared emitting diodes optically coupled to two mono- lithic silicon phototransistor detectors surface mountable, small outline plastic package ideally suited for high density applications and eliminates the need for through-the-board mounting ...

Page 2

... Input-Output Isolation Voltage (f = 60Hz min.) ISO P Total Device Power Dissipation @ T D Derate above 25°C T Ambient Operating Temperature Range A T Storage Temperature Range stg ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0 25°C Unless otherwise specified) A Rating = 25° 25° 25° Value Unit ...

Page 3

... For this test, Pins and 4 are common and Pins and 8 are common rating of 2500 V for min. is equivalent to a rating of 3,000 V ISO AC(rms) 4. Current Transfer Ratio (CTR ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0 25°C unless otherwise specified) A Test Conditions I = 30mA ...

Page 4

... I - LED FORWARD CURRENT (mA) F Fig. 3 Output Current vs. Ambient Temperature NORMALIZED 0.1 -80 -60 -40 - – AMBIENT TEMPERATURE ( A ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0 0.1 100 0.01 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 100 120 o C) Fig. 5 Dark Current vs. Ambient Temperature ...

Page 5

... TEST CIRCUIT INPUT ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 = 10V R L 10% OUTPUT 90% Adjust I to produce I = 2mA F C Figure 6. Switching Time Test Circuit and Waveform 5 WAVEFORMS INPUT PULSE OUTPUT PULSE off www.fairchildsemi.com ...

Page 6

... Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 8 0.164 (4.16) 0.144 (3.66) 1 ...

Page 7

... Ordering Information Option Order Entry Identifi R2V Marking Information Definitions ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 V VDE 0884 R2 Tape and reel (2500 units per reel) R2V VDE 0884, Tape and reel (2500 units per reel) 1 D213 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option – ...

Page 8

... Carrier Tape Specifications 3.50 0.20 0.30 MAX 8.3 0.10 0.1 MAX User Direction of Feed Dimensions in mm ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 8.0 0.10 2.0 0.05 4.0 0.10 6.40 0.20 8 Ø1.5 MIN 1.75 0.10 5.5 0.05 12.0 0.3 5.20 0.20 Ø ...

Page 9

... Time (t ) Maintained Above (T L Peak Body Package Temperature Time (t ) within 5°C of 260°C P Ramp-down Rate (T Time 25°C to Peak Temperature ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S Tsmax Preheat Area Tsmin t s 120 240 Time 25° ...

Page 10

... Datasheet Identification Product Status Advance Information Formative / In Design First Production Preliminary No Identification Needed Full Production Obsolete Not In Production ©2005 Fairchild Semiconductor Corporation MOCD213M Rev. 1.0.1 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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