CNY17-3-000E Avago Technologies US Inc., CNY17-3-000E Datasheet - Page 5

OPTOCOUPLER W/BASE 6-DIP

CNY17-3-000E

Manufacturer Part Number
CNY17-3-000E
Description
OPTOCOUPLER W/BASE 6-DIP
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of CNY17-3-000E

Output Type
Transistor with Base
Input Type
DC
Package / Case
6-DIP (0.300", 7.62mm)
Number Of Channels
1
Voltage - Isolation
5000Vrms
Current Transfer Ratio (min)
100% @ 10mA
Current Transfer Ratio (max)
200% @ 10mA
Voltage - Output
70V
Current - Output / Channel
150mA
Current - Dc Forward (if)
60mA
Vce Saturation (max)
300mV
Mounting Type
Through Hole
Forward Current
0.3 mA
Maximum Fall Time
10 us
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
10 us
Output Device
Transistor With Base
Configuration
1
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
300 mV
Isolation Voltage
5000 Vrms
Current Transfer Ratio
200 %
Maximum Forward Diode Voltage
1.7 V
Maximum Collector Current
150 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
60mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
6
Breakdown Voltage
70V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-1576-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CNY17-3-000E
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Electrical Specifications (T
* CTR =
Figure 1. Forward current vs. temperature.
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Current
*Current Transfer Ratio
Collector-Emitter Saturation Voltage
Response Time (Rise)
Response Time (Fall)
Isolation Resistance
Floating Capacitance
80
60
40
20
0
-55
T
A
I
I
-25
C
F
– AMBIENT TEMPERATURE – °C
x 100%
0
CNY17-1 fig 1
25
50
A
= 25˚C)
CNY17-1
CNY17-2
CNY17-3
CNY17-4
75
100
125
Symbol
V
I
C
I
BV
BV
BV
I
CTR
V
t
t
R
C
R
CEO
C
Figure 2. Collector power dissipation vs. tempera-
ture.
r
f
t
f
F
CE(sat)
iso
CEO
ECO
CBO
200
160
150
100
50
0
-55
T
A
-25
– AMBIENT TEMPERATURE – °C
Min.
70
6
70
4
40
63
100
160
1 x 10
0
11
CNY17-1 fig 2
25
Typ.
1.4
5
5
50
75
100
Max.
1.7
10
100
50
32
80
125
200
320
0.3
10
10
2
125
Figure 3. Frequency response.
Units
V
µA
pF
nA
V
V
V
mA
%
V
µs
µs
pF
-10
-2
-4
-6
-8
2
0
0.5
1
R
R
2
f – FREQUENCY – kHz
R
L
L
L
= 200 Ω
= 150 Ω
Test Conditions
I
V
V = 0, f = 1 MHz
V
I
I
I
I
V
I
V
R
DC 500 V
40 ~ 60% R.H.
V = 0, f = 1 MHz
F
C
E
C
F
F
= 75 Ω
CE
CE
CE
L
R
= 60 mA
= 10 mA
= 10 mA, I
= 0.1 mA, I
= 10 µA, I
= 0.1 mA, I
5
CNY17-1 fig 3
= 100 Ω
= 6 V
= 10 V
= 5 V
= 5 V, I
10
20
C
F
= 10 mA
C
F
= 0
F
= 2.5 mA
50
= 0
= 0
I
V
T
F
100 200
A
CC
= 10 mA
= 25°C
= 5 V
500

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