HCNR200 Avago Technologies US Inc., HCNR200 Datasheet - Page 8

• Manufacturer Part Number: HCNR200
• Description: OPTOCOUPLR ANLG HI-LIN 8DIP WIDE
• Manufacturer: Avago Technologies US Inc.

Specifications of HCNR200

• Mounting Type: Through Hole
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 0.25% @ 10mA
• Current Transfer Ratio (max): 0.75% @ 10mA
• Current - Dc Forward (if): 25mA
• Output Type: Linear Photovoltaic
• Package / Case: 8-DIP (0.400", 10.16mm)
• No. Of Channels: 1
• Isolation Voltage: 5kV
• Optocoupler Output Type: Photodiode
• Input Current: 20mA
• Output Voltage: 15V
• Opto Case Style: DIP
• No. Of Pins: 8
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Voltage - Output: -
• Current - Output / Channel: -
• Vce Saturation (max): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: 516-1135-5

Electrical Specifications
T
Parameter
Transfer Gain
Temperature
Coefficient of
Transfer Gain
DC NonLinearity
(Best Fit)
DC Nonlinearity
(Ends Fit)
Input Photo‑
diode Current
Transfer Ratio
(I
Temperature
Coefficient
of K
Photodiode
Leakage Current
Photodiode
Reverse Break‑
down Voltage
Photodiode
Capacitance
LED Forward
Voltage
LED Reverse
Breakdown
Voltage
Temperature
Coefficient of
Forward Voltage
LED Junction
Capacitance
8
A
= 25°C unless otherwise specified.
PD1
/I
1
F
)
∆K
∆K
∆V
Symbol
BV
NL
NL
C
C
BV
F
K
3
K
V
1
I
LK
/∆T
LED
/∆T
/∆T
PD
RPD
3
1
F
BF
EF
R
A
A
A
HCNR200
HCNR201
HCNR201
HCNR200
HCNR201
HCNR201
HCNR200
HCNR201
Device
Min.
0.85
0.95
0.93
0.25
0.36
1.3
1.2
2.5
30
0.016
1.00
1.00
1.00
0.01
0.01
0.01
0.50
0.48
Typ.
‑65
‑0.3
150
‑1.7
0.5
1.6
1.6
22
80
9
Max.
1.15
1.05
1.07
0.25
0.05
0.07
0.75
0.72
1.85
1.95
25
ppm/°C
mV/°C
Units
%/°C
nA
pF
pF
%
%
%
V
V
V
5 nA < I
0 V < V
5 nA < I
0 V < V
‑40°C < T
5 nA < I
0 V < V
‑40°C < T
5 nA < I
0 V < V
5 nA < I
0 V < V
5 nA < I
0 V < V
‑40°C < T
5 nA < I
0 V < V
5 nA < I
0 V < V
I
0 V < V
‑40°C < T
I
0 V < V
I
0 V < V
I
V
I
I
‑40°C < T
I
I
f = 1 MHz,
V
F
F
F
R
F
F
F
F
F
PD
= 10 mA,
= 10 mA
= 0 mA,
= 100 µA
= 10 mA
= 10 mA,
= 100 µA
= 10 mA
= 0 V
Test Conditions
= 0 V
PD
PD
PD
PD1
PD
PD
PD
PD
PD
PD1
PD
PD
PD
PD
PD
PD
PD
PD
PD
< 15 V
< 15 V
< 15 V
< 15 V
< 15 V
< 15 V
< 15 V
< 15 V
< 15 V
A
A
A
A
A
< 15 V
< 15 V
< 50 µA,
< 50 µA,
< 50 µA,
< 50 µA,
< 50 µA,
< 50 µA,
< 50 µA,
< 50 µA,
< 85°C,
< 85°C,
< 85°C,
< 85°C,
< 85°C
Fig.
4,5,
2,3
2,3
10
9,
6
7
7
8
Note
1
1
1
2
2
2
3