TLP181(GB,F,T) Toshiba, TLP181(GB,F,T) Datasheet - Page 25

• Manufacturer Part Number: TLP181(GB,F,T)
• Description: PHOTOCOUPLER TRANS-OUT 4-SMD
• Manufacturer: Toshiba

Specifications of TLP181(GB,F,T)

• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (min): 100% @ 5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 80V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 50mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Mounting Type: Surface Mount
• Package / Case: 4-SMD
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 100 % to 600 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Forward Current: 10 mA
• Maximum Input Diode Current: 10 mA
• Output Device: Phototransistor
• Number Of Elements: 1
• Reverse Breakdown Voltage: 5V
• Forward Voltage: 1.3V
• Collector-emitter Voltage: 80V
• Package Type: MFSOP
• Collector Current (dc) (max): 50mA
• Power Dissipation: 200mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TLP181GBF

*Under development. Specifications subject to change without notice. For the latest information, please contact your nearest Toshiba sales representative.
Note 1: The EN60747-5-2 safety standard for compact packages is different from that for standard DIP packages.
Note 2: BSI and IEC: : Approved (supplementary or basic insulation)
Photocouplers for IGBT/MOSFET Gate Drive (Continued)
TLP557
TLP700
TLP700F
TLP700H*
TLP700HF*
TLP701
TLP701F
TLP701A*
TLP701AF*
TLP701H*
TLP701HF*
TLP705
TLP705F
TLP705A*
TLP705AF*
Part Number
Since the mini-flat package is a compact package, please contact your nearest Toshiba sales representative for more details.
TÜV and VDE: : Approved
For the latest information, please contact your nearest Toshiba sales representative.
EN 60065- and IEC 60065-approved, EN 60950- and IEC 60950-approved
EN 60747-5-2-approved with option V4 or D4
Pin Configuration
8
1
6
1
6
1
6
1
6
1
6
1
6
1
6
1
7
2
5
5
5
5
5
5
5
2
2
2
2
2
2
2
: Design which meets safety standard/approval pending as of January 2011
6
3
4
3
4
3
4
3
4
3
4
3
4
3
4
3
5
4
DIP8
Direct drive of a power
transistor
SDIP6
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
SDIP6
T
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
SDIP6
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
SDIP6
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
SDIP6
Direct drive of a
small-power
IGBT/MOSFET
High speed (250 kHz)
Low power dissipation
SDIP6
Direct drive of a
small-power
IGBT/MOSFET
Low power dissipation
SDIP6
Direct drive of a
small-power
IGBT/MOSFET
High speed
Low power dissipation
opr
opr
= 125°C (max)
= 125°C (max)
Features
: Approved (reinforced insulation)
Delay Time (Max)
Propagation
0.5 μs
0.7 μs
0.7 μs
0.5 μs
0.7 μs
0.2 μs
0.2 μs
5 μs
25
Constant current
output : 0.25 A
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
±0.45 A
Output
±2.0 A
±2.0 A
±0.6 A
±0.6 A
±0.6 A
±0.6 A
: Design which meets safety standard/approval pending as of January 2011
7.5 mA
(Max)
5 mA
5 mA
5 mA
5 mA
5 mA
5 mA
8 mA
I
FHL
2500
Vrms
Vrms
5000
Vrms
Vrms
Vrms
5000
Vrms
Vrms
Vrms
5000
5000
5000
5000
5000
BVs
UL/cUL TÜV
/
/
/
/
/
/
/
/
Safety Standards
VDE
BSI
(2)
IEC