H11AA1300 Fairchild Optoelectronics Group, H11AA1300 Datasheet

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H11AA1300

Manufacturer Part Number
H11AA1300
Description
OPTOCOUPLER AC-IN/T-OUT VDE 6DIP
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of H11AA1300

Number Of Channels
1
Input Type
AC, DC
Voltage - Isolation
5300Vrms
Current Transfer Ratio (min)
20% @ ±10mA
Voltage - Output
30V
Current - Dc Forward (if)
60mA
Vce Saturation (max)
400mV
Output Type
Transistor with Base
Mounting Type
Through Hole
Package / Case
6-DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Current Transfer Ratio (max)
-
Other names
H11AA1.300
H11AA1ZQT
H11AA1ZQT
DS300212
DESCRIPTION
FEATURES
APPLICATIONS
TOTAL DEVICE
EMITTER
DETECTOR
The H11AAX series consists of two gallium-arsenide infrared
emitting diodes connected in inverse parallel driving a single
silicon phototransistor output.
• Bi-polar emitter input
• Built-in reverse polarity input protection
• Underwriters Laboratory (UL) recognized
• VDE approved
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface
2001 Fairchild Semiconductor Corporation
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation
Continuous Forward Current
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation
Detector Power Dissipation
Derate Linearly From 25°C
Derate Linearly From 25°C
Derate above 25°C
12/12/01
H11AA1
File #E94766 (ordering option ‘300’)
H11AA3
File #E90700
Symbol
I
T
T
T
F
P
P
P
OPR
STG
SOL
(pk)
I
F
D
D
D
1 OF 7
6
6
AC INPUT/PHOTOTRANSISTOR
H11AA2
1
1
Device
All
All
All
All
All
All
All
All
6
OPTOCOUPLERS
260 for 10 sec
-55 to +150
-55 to +100
1
Value
±1.0
350
100
200
300
4.6
2.6
4.0
1
2
3
H11AA4
www.fairchildsemi.com
SCHEMATIC
mW/°C
mW/°C
mW/°C
Units
mW
mW
mW
mA
°C
°C
°C
A
6
5 COLL
4 EMITTER
BASE

Related parts for H11AA1300

H11AA1300 Summary of contents

Page 1

H11AA1 DESCRIPTION The H11AAX series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. FEATURES • Bi-polar emitter input • Built-in reverse polarity input protection • Underwriters Laboratory (UL) recognized • VDE ...

Page 2

H11AA1 ELECTRICAL CHARACTERISTICS INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions EMITTER Input Forward Voltage Capacitance 1.0 MHz F DETECTOR Breakdown Voltage Collector to Emitter I = 1.0 mA Collector to Base I = ...

Page 3

H11AA1 Fig. 1 Input Voltage vs. Input Current 100 -20 -40 -60 -80 -100 -2.0 -1.5 -1.0 -0.5 0 INPUT VOLTAGE (V) F Fig. 3 Normalized CTR vs. Ambient Temperature 1.6 1.4 I ...

Page 4

H11AA1 Fig. 7 Switching Speed vs. Load Resistor 1000 25˚C A 100 T off 0.1 0.1 1 R-LOAD RESISTOR (k ...

Page 5

H11AA1 Package Dimensions (Through Hole) PIN 1 ID. 0.270 (6.86) 0.240 (6.10) 0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.135 (3.43) 0.020 (0.51) 0.154 (3.90) MIN 0.100 (2.54) 0.016 (0.40) 0.008 (0.20) 0.022 (0.56) 0° to 15° ...

Page 6

H11AA1 ORDERING INFORMATION Option 300 300W 3S 3SD Carrier Tape Specifications (“D” Taping Orientation) 4.85 ± 0.20 13.2 ± 0.2 0.1 MAX NOTE All dimensions are millimeters www.fairchildsemi.com AC INPUT/PHOTOTRANSISTOR H11AA3 H11AA2 Order Entry Identifier .S .SD ...

Page 7

H11AA1 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT ...

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