VSMS3700-GS08 Vishay, VSMS3700-GS08 Datasheet - Page 2

• Manufacturer Part Number: VSMS3700-GS08
• Description: EMITTER IR PLCC-2 STD 950NM
• Manufacturer: Vishay

Specifications of VSMS3700-GS08

• Rise Time: 800 ns
• Radiant Intensity: 4.5 mW/sr
• Viewing Angle: 120°
• Current - Dc Forward (if): 100mA
• Radiant Intensity (ie) Min @ If: 1.6mW/sr @100mA
• Wavelength: 950nm
• Voltage - Forward (vf) Typ: 1.3V
• Orientation: Top View
• Mounting Type: Surface Mount
• Package / Case: PLCC-2
• Beam Angle: 60 deg
• Maximum Power Dissipation: 170 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Fall Time: 800 ns
• Forward Current: 100 mA
• Forward Voltage: 1.3 V
• Mounting Style: SMD/SMT
• Peak Wavelength: 950nm
• Forward Current If(av): 100mA
• Fall Time Tf: 800ns
• Supply Voltage Range: 1.3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1258-2

VSMS3700
Vishay Semiconductors
Note
T
Note
T
www.vishay.com
323
amb
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ
Rise time
Fall time
Virtual source diameter
= 25 °C, unless otherwise specified
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
21341
180
160
140
120
100
80
60
40
20
0
0
R
10 20 30 40 50 60 70 80 90 100
thJA
T
amb
= 250 K/W
- Ambient Temperature (°C)
e
p
F
For technical questions, contact:
J-STD-051, soldered on PCB
V
Acc. figure 11, J-STD-020
I
I
I
R
Infrared Emitting Diode, 950 nm,
F
F
F
I
t
F
p
I
= 0 V, f = 1 MHz, E = 0
= 100 mA, t
= 100 mA, t
= 100 mA, t
TEST CONDITION
TEST CONDITION
F
/T = 0.5, t
= 1.5 A, t
= 1 A, t
I
I
I
I
I
EN 60825-1
t
F
F
F
F
F
I
I
p
F
F
V
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
I
I
= 20 mA
F
= 20 mA
F
= 100 μs
R
= 1 A
= 1 A
= 5 V
p
p
p
= 100 μs
p
p
p
= 100 μs
= 100 μs
= 20 ms
= 20 ms
= 20 ms
GaAs
[e-mail]
SYMBOL
TKλ
TK
TKφ
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Δλ
V
V
C
φ
λ
I
I
I
ϕ
d
t
t
t
t
SYMBOL
R
e
e
F
F
e
p
r
r
f
f
VF
j
21342
e
p
R
T
I
T
T
I
FSM
V
P
FM
amb
thJA
I
T
stg
F
sd
R
V
j
120
100
80
60
40
20
0
0
MIN.
1.6
R
10
thJA
T
amb
20 30 40
= 250 K/W
- Ambient Temperature (°C)
- 40 to + 100
- 40 to + 85
VALUE
TYP.
- 1.3
- 0.8
± 60
100
200
170
100
260
250
950
800
400
800
400
1.5
1.3
1.8
4.5
0.2
0.5
30
35
15
50
5
50 60 70 80
Document Number: 81373
MAX.
100
1.7
Rev. 1.3, 03-Nov-09
8
90 100
UNIT
K/W
mW
mA
mA
°C
°C
°C
°C
A
V
mW/sr
mW/sr
mV/K
UNIT
nm/K
%/K
mW
deg
mm
nm
nm
μA
pF
ns
ns
ns
ns
V
V