CQY37N Vishay, CQY37N Datasheet - Page 2

• Manufacturer Part Number: CQY37N
• Description: DIODE IR EMITTER GAAS 1.8MM
• Manufacturer: Vishay

Specifications of CQY37N

• Radiant Intensity: 5 mW/sr
• Viewing Angle: 24°
• Current - Dc Forward (if): 100mA
• Radiant Intensity (ie) Min @ If: 2.2mW/sr @ 50mA
• Wavelength: 950nm
• Voltage - Forward (vf) Typ: 1.3V
• Orientation: Top View
• Mounting Type: Through Hole
• Package / Case: Radial, 1.8mm (T-3/4)
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 170 mW
• Maximum Operating Temperature: + 100 C
• Lens Shape: Circular
• Peak Wavelength: 950nm
• Forward Current If(av): 50mA
• Rise Time: 800ns
• Supply Voltage Range: 1.3V
• Operating Temperature Range: -25°C To +85°C
• Diode Case Style: T-3/4
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1027

CQY37N
Vishay Semiconductors
BASIC CHARACTERISTICS (T
www.vishay.com
2
BASIC CHARACTERISTICS (T
PARAMETER
Forward voltage
Temperature coefficient of V
Breakdown voltage
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of 
Angle of half intensity
Peak wavelength
Spectral bandwidth
Rise time
Virtual source diameter
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
94 7996
21319
10
Fig. 3 - Forward Current vs. Forward Voltage
10
10
10
10
10
180
160
140
120
100
-1
80
60
40
20
0
4
3
2
1
0
0
0
R
10 20 30 40 50 60 70 80 90 100
thJA
T
amb
V
= 450 K/W
1
F
- Ambient Temperature (°C)
- Forward Voltage (V)
e
F
2
For technical questions, contact:
amb
I
F
amb
= 1.5 A, t
3
V
R
= 25 °C, unless otherwise specified)
Infrared Emitting Diode, 950 nm,
I
I
I
F
F
F
= 0 V, f = 1 MHz, E = 0
= 25 °C, unless otherwise specified)
TEST CONDITION
= 50 mA, t
= 50 mA, t
= 50 mA, t
I
I
I
F
I
I
I
F
R
p
F
F
F
= 100 mA
= 100 mA
/T = 0.01, t
4
= 100 μA
= 50 mA
= 50 mA
= 50 mA
p
p
p
 20 ms
 20 ms
 20 ms
p
 10 μs
GaAs
[e-mail]
SYMBOL
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
TK
TK
V
Fig. 2 - Forward Current Limit vs. Ambient Temperature

V
C


(BR)
I

d
t
t
94 7990
21320
e
F
e
p
r
r
VF
j
e
120
100
1.2
1.1
1.0
0.9
0.8
0.7
80
60
40
20
0
0
0
10
R
MIN.
thJA
T
2.2
4.8
T
5
amb
amb
20 30 40
20
= 450 K/W
- Ambient Temperature (°C)
- Ambient Temperature (°C)
40
TYP.
- 1.3
- 0.8
± 12
950
800
400
50 60 70 80
1.3
1.2
50
10
50
I
5
F
= 10 mA
60
Document Number: 81002
MAX.
80
17.8
1.6
11
Rev. 1.7, 08-Mar-11
90 100
100
mW/sr
mV/K
UNIT
%/K
mW
deg
mm
nm
nm
μA
pF
ns
ns
V