QED223 Fairchild Optoelectronics Group, QED223 Datasheet

LED IR EMITTING ALGAAS 880NM 5MM

QED223

Manufacturer Part Number
QED223
Description
LED IR EMITTING ALGAAS 880NM 5MM
Manufacturer
Fairchild Optoelectronics Group
Series
QED22xr
Datasheet

Specifications of QED223

Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
25mW/sr @ 100mA
Wavelength
880nm
Voltage - Forward (vf) Typ
1.5V
Viewing Angle
40°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
T 1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
QED223
Manufacturer:
FSC
Quantity:
425
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QED223
Manufacturer:
COILCRAFT
Quantity:
470
Part Number:
QED223A4R0
Manufacturer:
FSC
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Part Number:
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Manufacturer:
FAIRCHILD
Quantity:
8 000
©2001 Fairchild Semiconductor Corporation
QED221, QED222, QED223 Rev. 1.0.1
QED221, QED222, QED223
Plastic Infrared Light Emitting Diode
Features
Package Dimensions
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
Chip material = AlGaAs
Package type: T-1 3/4 (5mm lens diameter)
Matched photosensor: QSD122/QSD123/QSD124
Medium wide emission angle, 40°
High output power
Package material and color: clear, purple tinted, plastic
= 880nm
unless otherwise specified.
REFERENCE
SURFACE
PACKAGE DIMENSIONS
0.020 (0.51)
SQ. (2X)
0.800 (20.3)
0.050
(1.25)
MIN
0.195 (4.95)
0.100 (2.54)
0.305 (7.75)
NOM
0.040 (1.02)
0.240 (6.10)
0.215 (5.45)
CATHODE
NOM
Description
The QED221, QED222 and QED223 are 880nm
AlGaAs LEDs encapsulated in a clear purple tinted,
plastic T-1 3/4 package.
Schematic
CATHODE
ANODE
www.fairchildsemi.com
August 2008

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QED223 Summary of contents

Page 1

... Tolerance is ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2001 Fairchild Semiconductor Corporation QED221, QED222, QED223 Rev. 1.0.1 Description The QED221, QED222 and QED223 are 880nm AlGaAs LEDs encapsulated in a clear purple tinted, plastic T-1 3/4 package. 0.305 (7.75) 0.040 (1.02) ...

Page 2

... Radiant Intensity QED222 E I Radiant Intensity QED223 E TC Temperature Coefficient IE t Rise Time r t Fall Time f C Junction Capacitance j ©2001 Fairchild Semiconductor Corporation QED221, QED222, QED223 Rev. 1.0 25°C unless otherwise specified) A Parameter (2)(3)(4) (2)(3) (1) ( 25°C) A Test Conditions Min 20mA F I ...

Page 3

... PW Duty Cycle = 4% 4 3.0 2.0 1.0 0.0 10 100 I – FORWARD CURRENT (mA) F ©2001 Fairchild Semiconductor Corporation QED221, QED222, QED223 Rev. 1.0.1 Figure 2. Peak Wavelength vs. Ambient Temperature 910 908 906 904 902 900 898 896 894 900 950 1,000 1,050 0 Figure 4. Normalized Radient Intensity vs. Ambient Temperature 1 ...

Page 4

... Typical Performance Curves Figure 7. Radiation Diagram 90 100 110 120 130 140 150 160 170 180 1.0 0.8 0.6 0.4 0.2 0.0 ©2001 Fairchild Semiconductor Corporation QED221, QED222, QED223 Rev. 1.0.1 (Continued) Figure 8. Coupling Characteristics of QED22X and QSD22X 0.4 10 0.2 0 0.2 0.4 ...

Page 5

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Ful l Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation QED221, QED222, QED223 Rev. 1.0.1 ® PowerTrench ® Programmable Active Droop™ SM ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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