TSFF5210 Vishay, TSFF5210 Datasheet - Page 3
TSFF5210
Manufacturer Part Number
TSFF5210
Description
EMITTER IR 5MM HI EFF 870NM
Manufacturer
Vishay
Specifications of TSFF5210
Radiant Intensity
1800 mW or sr
Viewing Angle
20°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
90mW/sr @ 100mA
Wavelength
870nm
Voltage - Forward (vf) Typ
1.5V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 5mm Dia (T 1 3/4)
Maximum Forward Current
100 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Lens Shape
Circular
Peak Wavelength
870nm
Forward Current If(av)
100mA
Rise Time
15ns
Fall Time Tf
15ns
Supply Voltage Range
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1207
BASIC CHARACTERISTICS
T
Document Number: 81090
Rev. 1.7, 29-Jun-09
amb
= 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
16032
18873
16031
1000
1000
1000
100
100
100
0.1
10
10
1
1
0.01
0
1
V
I
F
0.1
F
1
t
- Forward Voltage (V)
P
- Forward Current (mA)
10
- Pulse Duration (ms)
t
P
/T = 0.01
1
2
For technical questions, contact:
100
t
t
P
P
/T = 0.001
0.02
= 100 µs
0.05
High Speed Infrared Emitting Diode,
T
0.2
0.5
10
amb
3
870 nm, GaAlAs Double Hetero
< 50 °C
0.1
1000
100
4
emittertechsupport@vishay.com
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
15989
95 9886
14256
Fig. 6 - Relative Radiant Power vs. Wavelength
1.25
0.75
0.25
1.0
0.5
1.0
0.9
0.8
0.7
- 1
- 2
- 3
- 4
- 5
1
0
0
780
10
0.6
1
Fig. 8 - Attenuation vs. Frequency
I
FAC
I
0.4
FDC
= 30 mA pp
10
f - Frequency (kHz)
= 70 mA
2
λ - Wavelength (nm)
Vishay Semiconductors
0.2
10
880
0°
0
3
10°
10
4
20°
TSFF5210
980
10
www.vishay.com
30°
40°
50°
60°
70°
80°
5
3