TSFF5210 Vishay, TSFF5210 Datasheet - Page 4
TSFF5210
Manufacturer Part Number
TSFF5210
Description
EMITTER IR 5MM HI EFF 870NM
Manufacturer
Vishay
Specifications of TSFF5210
Radiant Intensity
1800 mW or sr
Viewing Angle
20°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
90mW/sr @ 100mA
Wavelength
870nm
Voltage - Forward (vf) Typ
1.5V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 5mm Dia (T 1 3/4)
Maximum Forward Current
100 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Lens Shape
Circular
Peak Wavelength
870nm
Forward Current If(av)
100mA
Rise Time
15ns
Fall Time Tf
15ns
Supply Voltage Range
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1207
TSFF5210
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
www.vishay.com
4
6.544-5258.09-4
Issue: 4; 19.05.09
15909
0.5
+ 0.15
- 0.05
A
For technical questions, contact:
High Speed Infrared Emitting Diode,
C
2.54 nom.
1.1 ± 0.25
870 nm, GaAlAs Double Hetero
emittertechsupport@vishay.com
0.5
Ø 5 ± 0.15
Area not plane
+ 0.15
- 0.05
R2.49 (sphere)
Document Number: 81090
Rev. 1.7, 29-Jun-09
technical drawings
according to DIN
specifications