TSFF5210 Vishay, TSFF5210 Datasheet - Page 4

EMITTER IR 5MM HI EFF 870NM

TSFF5210

Manufacturer Part Number
TSFF5210
Description
EMITTER IR 5MM HI EFF 870NM
Manufacturer
Vishay
Datasheets

Specifications of TSFF5210

Radiant Intensity
1800 mW or sr
Viewing Angle
20°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
90mW/sr @ 100mA
Wavelength
870nm
Voltage - Forward (vf) Typ
1.5V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
Radial, 5mm Dia (T 1 3/4)
Maximum Forward Current
100 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Lens Shape
Circular
Peak Wavelength
870nm
Forward Current If(av)
100mA
Rise Time
15ns
Fall Time Tf
15ns
Supply Voltage Range
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
751-1207
TSFF5210
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
www.vishay.com
4
6.544-5258.09-4
Issue: 4; 19.05.09
15909
0.5
+ 0.15
- 0.05
A
For technical questions, contact:
High Speed Infrared Emitting Diode,
C
2.54 nom.
1.1 ± 0.25
870 nm, GaAlAs Double Hetero
emittertechsupport@vishay.com
0.5
Ø 5 ± 0.15
Area not plane
+ 0.15
- 0.05
R2.49 (sphere)
Document Number: 81090
Rev. 1.7, 29-Jun-09
technical drawings
according to DIN
specifications

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