SFH 4556 OSRAM Opto Semiconductors Inc, SFH 4556 Datasheet - Page 25

EMITTER IR 850NM 5MM RADIAL

SFH 4556

Manufacturer Part Number
SFH 4556
Description
EMITTER IR 850NM 5MM RADIAL
Manufacturer
OSRAM Opto Semiconductors Inc
Datasheets

Specifications of SFH 4556

Wavelength
850nm
Package / Case
Radial - 2 Lead
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
40mW/sr @ 100mA
Voltage - Forward (vf) Typ
1.5V
Viewing Angle
40°
Orientation
Top View
Mounting Type
Through Hole
Beam Angle
+/- 20 deg
Radiant Intensity
130 mW/sr
Maximum Forward Current
100 mA
Fall Time
12 ns
Mounting Style
Through Hole
Operating Voltage
1.5 V
Rise Time
12 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
475-2871
Q65110A6087
SFH 4556
For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
Smart DIL
Mini Sidelooker
SMT RLS
SMT DIL
DIL
Photodetectors for special applications
Schmitt Trigger
Package
Package
Blue sensitive photodiode
Package
Infrared Components
Silicon Photodetectors
Type
SFH 5440
SFH 5140 F
Type
SFH 9240
Type
BPW 34 BS
BPW 34 B
http://catalog.osram-os.com
http://catalog.osram-os.com
http://catalog.osram-os.com
Half
angle
ϕ
[°]
± 60
± 12
Features
Schmitt Trigger Output,
active "low"
Half
angle
ϕ
[°]
± 60
± 60
V
[V]
4 ... 18
4 ... 18
Radiant
sensitive
area typ.
[mm
7.45
7.45
CC
2
]
E
[mW/m
+1700 (≤
+3200)
+150 (≤ +500)
I
[μA]
14.8 (≥
10.8)
14.8 (≥
10.8)
P
e typ
V
[V]
4 ... 18
CC
2
]
Measure-
ment cond.
λ = 400
nm, E
mW/cm
V
λ = 400
nm, E
mW/cm
V
R
R
= 5 V
= 5 V
e
e
= 1
= 1
2
2
,
,
Measurement
cond.
V
950 nm
V
950 nm
CC
CC
I
[mA]
3 (≤ 10)
F,on
I
[nA]
2 (≤ 30) V
2 (≤ 30) V
= 5V, λ =
= 5V, λ =
R
Measure-
ment cond.
R
R
= 10 V
= 10 V
λ
typ.
[nm]
400 ... 1100 16
840 ... 1080 16
Measurement cond.
Kodak neutral white
testcard with 90%
reflection; V
= 1 mm
10%
λ
typ.
[nm]
350 ...
1100
350 ...
1100
10%
CC
= 5 V, d
I
max
[mA]
OUT
t
typ
[μs]
0.025
0.025
r
, t
f
E
[-]
0.6 (0.5 ... 0.9)
e,off
t
[μs]
5 (≤ 15)
5 (≤ 15)
PLH
Measure-
ment cond.
V
R
λ = 850
nm
V
R
λ = 850
nm
/ E
R
R
L
L
= 5 V,
= 50 Ω,
= 5 V,
= 50 Ω,
e,on
Ordering Code
Q65110A1212
Q62702P5112
Ordering Code
Q65110A2714
Ordering Code
Q65110A2625
Q65110A3126
Technical Data
Package
Fig.
46
47
Package
Fig.
55
Package
Fig.
29
37
131

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