SFH 4556 OSRAM Opto Semiconductors Inc, SFH 4556 Datasheet - Page 43

• Manufacturer Part Number: SFH 4556
• Description: EMITTER IR 850NM 5MM RADIAL
• Manufacturer: OSRAM Opto Semiconductors Inc

Specifications of SFH 4556

• Wavelength: 850nm
• Package / Case: Radial - 2 Lead
• Current - Dc Forward (if): 100mA
• Radiant Intensity (ie) Min @ If: 40mW/sr @ 100mA
• Voltage - Forward (vf) Typ: 1.5V
• Viewing Angle: 40°
• Orientation: Top View
• Mounting Type: Through Hole
• Beam Angle: +/- 20 deg
• Radiant Intensity: 130 mW/sr
• Maximum Forward Current: 100 mA
• Fall Time: 12 ns
• Mounting Style: Through Hole
• Operating Voltage: 1.5 V
• Rise Time: 12 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 475-2871; Q65110A6087; SFH 4556

For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Infrared Emitters
For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Infrared Emitters
For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Infrared Emitters
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
Multi TOPLED
Multi TOPLED
Multi TOPLED
Emitters for special applications
Detector/Emitter in Multi TOPLED package
Package
2 Emitters in Multi TOPLED package
Package
Detector/Emitter in Multi TOPLED package
Package
Infrared Components
Infrared Emitters
Type
SFH 331-JK
Type
SFH 7222
Type
SFH 7221
http://catalog.osram-os.com
http://catalog.osram-os.com
http://catalog.osram-os.com
Emitter
λ
typ
[nm]
635
Detector
Radiant sensi-
tive area typ.
[mm
0.038
λ
typ
[nm]
880
565
Emitter
λ
typ
[nm]
880
Detector
Radiant sensi-
tive area typ.
[mm
0.038
peak
peak
peak
2
2
]
]
Half
angle
ϕ
[°]
± 60
Half angle
ϕ
[°]
± 60
I
[μA]
≥ 16
Half angle
ϕ
[°]
± 60
I
[μA]
≥ 16
PCE
PCE
Φ
typ
[mW]
23
e
I
[mcd]
6 (4 ... 12.5)
Measurement
cond.
λ = 950 nm, E
= 0.1 mW/cm
V
I
[mW/sr]
≥ 4
Measurement
cond.
λ = 880 nm, E
= 0.1 mW/cm
V
V
e
I
[mW/sr]
7 (≥ 4)
CE
CE
e
= 5 V
= 5 V
2
Measure-
ment cond.
I
t
2
F
e
p
e
,
,
= 100 mA,
= 20 ms
Measurement
cond.
I
V
max.
[V]
35
Measurement
cond.
I
= 20 ms
V
max.
[V]
35
F
F
CE
CE
= 10 mA
= 100 mA, t
V
[V]
1.5 (≤ 1.8)
2.0 (≤ 2.6)
F
p
V
[V]
2 (≤ 2.6)
λ
typ.
[nm]
440 ... 1150
V
[V]
1.5 (≤ 1.8)
λ
typ.
[nm]
440 ... 1150
F
F
10%
10%
Measure-
ment cond.
I
t
I
t
F
p
F
p
= 100 mA,
= 10 mA,
= 20 ms
= 20 ms
Measurement
cond.
I
t
typ
[μs]
7
Measurement
cond.
I
= 20 ms
t
typ
[μs]
7
F
F
r
r
, t
, t
= 100 mA, t
= 10 mA
f
f
t
typ
[ns]
500
r
, t
f
p
Ordering Code
Q65110A2821
Ordering Code
Q65110A2742
Ordering Code
Q65110A2741
Technical Data
Package
Fig.
11
Package
Fig.
67
Package
Fig.
12
149