HSDL-4261-A01 Lite-On Electronics, HSDL-4261-A01 Datasheet

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HSDL-4261-A01

Manufacturer Part Number
HSDL-4261-A01
Description
EMITTER IR 5MM HI POWER 870NM
Manufacturer
Lite-On Electronics
Datasheet

Specifications of HSDL-4261-A01

Wavelength
870nm
Package / Case
T 1 3/4
Current - Dc Forward (if)
100mA
Orientation
Top View
Mounting Type
Through Hole
Radiant Intensity
180 mW/sr
Maximum Forward Current
100 mA
Maximum Power Dissipation
190 mW
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
- 40 C
Lens Shape
Circular
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Forward (vf) Typ
-
Viewing Angle
-
Radiant Intensity (ie) Min @ If
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
High-Power T-1¾ (5mm) AlGaAs Infrared (870nm) Lamp
Data Sheet
Description
The HSDL-4261 Infrared emitter was designed for ap-
plications that require high power, low forward voltage
and high speed. It utilizes Aluminum Galium Arsenide
(AlGaAs) LED technology and is optimized for speed and
efficiency at emission wavelengths of 870nm. T he material
used produces high radiant efficiency over a wide range
of currents. The emitter is packaged in clear T-1¾ (5mm)
package.
5.0 ± 0.
0.50 ± 0.1
0.7 max.
5.8 ± 0.
CATHODE
FLAT
.54
Features
• Very High Power AlGaAs LED Technology
• 870nm Wavelength
• T-1¾ Package
• Low Cost
• Low Forward Voltage: 1.4V at 20mA
• High Speed: 15ns Rise Times
Applications
• Industrial IR Equipments
• IR Portable Instruments
• Consumer Electronics
• High Speed IR Communications
• IR Audio
• IR Telephones
P
art
N
umber
HSDL-4261
(Optical mouse etc)
(IR LANs, IR Modems, IR Dongles etc)
Lead Form
Straight
Shipping Option
Bulk

Related parts for HSDL-4261-A01

HSDL-4261-A01 Summary of contents

Page 1

... High-Power T-1¾ (5mm) AlGaAs Infrared (870nm) Lamp Data Sheet Description The HSDL-4261 Infrared emitter was designed for ap- plications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for speed and efficiency at emission wavelengths of 870nm material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package. 5.0 ± ...

Page 2

Absolute Maximum Ratings at 25°C Parameter DC Forward Current Power Dissipation Reverse Voltage Operating Temperature Storage Temperature LED Junction Temperature Lead Soldering Temperature Notes: 1. Derate as shown in Figure 6. Electrical Characteristics at 25°C Parameter Forward Voltage Forward VoltageTemperature Coefficient Series Resistance Diode Capacitance Reverse Voltage Thermal Resistance, Junction to Ambient Optical Characteristics at 25°C Parameter Radiant Optical Power Radiant On-Axis Intensity Radiant On-Axis Intensity Temperature Coefficient Viewing Angle Peak wavelength ...

Page 3

Wavelength (nm) Figure 1. Relative Radiant Intensity vs. Wavelength 1000 100 T = 5˚ 0.0 0.5 1.0 1.5 .0 Forward Voltage, V Figure 3. Peak Forward Current ...

Page 4

Figure 7. Radiant Intensity vs. Angular Displacement For company and product information, please go to our web site: http://optodatabook.liteon.com/databook/databook.aspx Data subject to change. Copyright © 2007 Lite-On Technology Corporation. All rights reserved. WWW.liteon.com or ...

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