SFH 4850 E7800 OSRAM Opto Semiconductors Inc, SFH 4850 E7800 Datasheet - Page 2

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SFH 4850 E7800

Manufacturer Part Number
SFH 4850 E7800
Description
EMITTER IR 850NM TO-18
Manufacturer
OSRAM Opto Semiconductors Inc
Datasheets

Specifications of SFH 4850 E7800

Wavelength
850nm
Package / Case
TO-18
Current - Dc Forward (if)
200mA
Radiant Intensity (ie) Min @ If
4mW/sr @ 100mA
Voltage - Forward (vf) Typ
1.5V
Viewing Angle
46°
Orientation
Top View
Mounting Type
Through Hole
Radiant Intensity
7 mW/sr
Maximum Forward Current
200 mA
Maximum Power Dissipation
470 mW
Maximum Operating Temperature
+ 80 C
Minimum Operating Temperature
- 40 C
Lens Shape
Circular
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q65110A2093
Grenzwerte (
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Vorwärtsgleichstrom
Forward current
Stoßstrom,
Surge current
Verlustleistung
Power dissipation
Wärmewiderstand Sperrschicht - Umgebung
Thermal resistance junction - ambient
Wärmewiderstand Sperrschicht - Gehäuse
Thermal resistance junction - case
Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der Strahlung
Wavelength at peak emission
I
Centroid-Wellenlänge der Strahlung
Centroid wavelength
I
Spektrale Bandbreite bei 50% von
Spectral bandwidth at 50% of
I
Abstrahlwinkel
Half angle
Aktive Chipfläche
Active chip area
Abmessungen der aktiven Chipfläche
Dimension of the active chip area
2009-05-14
F
F
F
= 100 mA
= 100 mA
= 100 mA
t
p
T
T
= 10 μs,
A
C
= 25 °C)
= 25 °C)
D
= 0
I
max
I
max
Symbol
Symbol
T
V
I
I
P
R
R
Symbol
Symbol
λ
λ
Δλ
ϕ
A
L
L
F
FSM
2
peak
centroid
op
R
tot
thJA
thJC
×
×
, T
B
W
stg
Wert
Value
– 40 … + 80
5
200
1.5
470
450
160
Wert
Value
860
850
42
± 23
0.09
0.3 × 0.3
SFH 4850 E7800
Einheit
Unit
°C
V
mA
A
mW
K/W
K/W
Einheit
Unit
nm
nm
nm
Grad
deg.
mm
mm²
2

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