1N6266 Fairchild Optoelectronics Group, 1N6266 Datasheet

LED GAAS INFRARED 940NM TO-46

1N6266

Manufacturer Part Number
1N6266
Description
LED GAAS INFRARED 940NM TO-46
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of 1N6266

Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
25mW/sr @ 100mA
Wavelength
940nm
Viewing Angle
20°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
TO-46
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Forward (vf) Typ
-
Other names
1N6266GE
1N6266QT
1N6266QT
IN6266

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1N6266
Manufacturer:
SHARP
Quantity:
100
DS300278
  2001 Fairchild Semiconductor Corporation
PARAMETER
*Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
*Reverse Leakage Current
*Radiant Intensity
Rise Time 0-90% of output
Fall Time 100-10% of output
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL / OPTICAL CHARACTERISTICS
*Storage Temperature
*Soldering Temperature (Iron)
*Soldering Temperature (Flow)
*Continuous Forward Current
*Forward Current (pw, 1µs; 200Hz)
*Reverse Voltage
*Power Dissipation (T
Operating Temperature
Power Dissipation (T
unless otherwise specified.
0.040 (1.02)
0.040 (1.02)
0.030 (0.76)
3/12/01
1.00 (25.4)
NOM
PACKAGE DIMENSIONS
0.184 (4.67)
MIN
Parameter
C
A
= 25°C)
= 25°C)
45°
0.209 (5.31)
1
(3,4,5 and 6)
(3,4 and 6)
(2)
(1)
3
0.100 (2.54)
TEST CONDITIONS
0.050 (1.27)
I
I
I
F
F
F
Ø0.020 (0.51) 2X
V
0.255 (6.48)
= 100 mA
= 100 mA
= 100 mA
R
ANODE
(CASE)
= 3 V
(T
A
= 25°C unless otherwise specified)
GaAs INFRARED EMITTING DIODE
Symbol
T
T
1 OF 7
T
T
SYMBOL
SOL-F
SOL-I
V
P
P
OPR
STG
I
I
F
F
R
D
D
(T
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
5. Soldering iron tip
6. As long as leads are not under any stress or spring tension
V
Ie
I
t
t
R
P
r
f
F
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the
• Hermetically sealed package
• High irradiance level
• (*) Indicates JEDEC registered values
A
DESCRIPTION
• The 1N6266 is a 940 nm LED in a
agents.
TO-18 series phototransistor
narrow angle, TO-46 package.
=25°C) (All measurements made under pulse conditions)
MIN
935
25
260 for 10 sec
1/16”
240 for 5 sec
-65 to +125
-65 to +150
Rating
(1.6mm) minimum from housing.
100
170
1.3
10
3
TYP
±10
1.0
1.0
MAX
955
1.7
10
www.fairchildsemi.com
1N6266
(Connected
CATHODE
SCHEMATIC
To Case)
ANODE
Unit
mW
mA
°C
°C
°C
°C
W
A
V
mW/sr
UNITS
3
1
Deg.
nm
µA
µs
µs
V

Related parts for 1N6266

1N6266 Summary of contents

Page 1

... High irradiance level • (*) Indicates JEDEC registered values ANODE (CASE) DESCRIPTION • The 1N6266 is a 940 nm LED in a narrow angle, TO-46 package. Ø0.020 (0.51 Derate power dissipation linearly 1.70 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 13.0 mW/°C above 25°C case. ...

Page 2

... Fig.2 Maximum Temperature vs. Input Current 10.0 8.0 6.0 4.0 2.0 1.0 0.8 0.6 0.4 0.2 0.1 .08 .06 .04 . 1N6266 100% Duty Cycle 10% Duty 1% Duty Cycle .04 .06 . INPUT CURRENT (mA FORWARD VOLTAGE (V) F Fig.4 Forward Voltage vs. Forward Current 3/12/01 ...

Page 3

... 100 1 .10 .08 .06 .04 .02 .01 -50 - AMBIENT TEMPERATURE (˚C) A Fig.7 Output vs. Temperature 1N6266 900 920 940 960 980 1000 - WAVELENGTH - NANOMETERS Fig.6 Spectral Output Normalized to 100 .01 Steradians T = 25˚C A Silicon Photodiode as Detector 100 125 150 www.fairchildsemi.com 1020 ...

Page 4

... Prior to the introduction of the 1N6266, the best method of estimating the photodetector received infrared was to geometrically proportion the piecewise inte- gration of the typical beam pattern with the specified mini- mum total power output of the IRED ...

Page 5

... IRED Seating Plane SPHERE IRED Centered on IRED Axis C and L Seating Plane d MATCHING A PHOTOTRANSISTOR WITH 1N6266 Assume a system requiring bias conditions at specification points. Given cm min ≅ Then 25/( Detector Evaluation: I MIN L TYPE mA L14G1 1 L14G2 0.5 Calculated is L14G1 ( (2) 6. L14G2 ( (1) 6. Since the system requires an I ...

Page 6

... T - AMBIENT TEMPERATURE (C) A Fig. 9 Output vs. Ambient Temperature IRED/Phototransistor Pair www.fairchildsemi.com GaAs INFRARED EMITTING DIODE 100.0 10.0 1.0 L14G1 1.0" 100 125 150 1N6266 Normalized to 100 Distance measured from seating plane to seating plane 1N6N66 L14G1 1A, Pulsed 100 mA Fig vs. Distance L IRED/Phototransistor Pair ...

Page 7

... DS300278 3/12/01 GaAs INFRARED EMITTING DIODE 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness 1N6266 www.fairchildsemi.com ...

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