EPC9001 EPC, EPC9001 Datasheet - Page 3

• Manufacturer Part Number: EPC9001
• Description: BOARD DEV FOR EPC1015 40V GAN
• Manufacturer: EPC

Specifications of EPC9001

• Design Resources: EPC9001 Schematic EPC9001 Gerber Files EPC9001 Bill Of Materials
• Main Purpose: Power Management, Half H-Bridge Driver (External FET)
• Utilized Ic / Part: EPC1015
• Primary Attributes: 40V, 15A Max Output GaNFET Capability
• Secondary Attributes: GaNFET Driver Circuit Uses 7 ~ 12V
• Kit Contents: (2) 917-1009-1-ND - TRANS GAN 40V 33A BUMPED DIE
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Embedded: -
• Other names: 917-1010

DATASHEET
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2010 |
TAPE AND REEL CONFIGURATION
4mm pitch, 12mm wide tape on 7” reel
10
10
10
10
10
-1
-2
-20
0
2
1
Figure 9: Normalized Threshold Voltage
0
Figure 7: Reverse Drain-Source Characteristics
I
D
= 9 mA
7” reel
0
0.5
25˚C
125˚C
20
V
T
1
J
SD
– Junction Temperature ( ˚C )
– Source to Drain Voltage (V)
40
a
1.5
Dimension (mm) target min
b
c (see note)
f (see note)
60
c
a
b
d
e
g
2
80
d
2.5
12.0 11.7 12.3
1.75 1.65 1.85
5.50 5.45 5.55
4.00 3.90 4.10
4.00 3.90 4.10
2.00 1.95 2.05
100
1.5
EPC1015
1.5
e
120
3
max
1.6
140
3.5
f
Note: Pocket position is relative to the sprocket hole
measured as true position of the pocket, not the pocket hole
g
.018
.016
.014
.012
.008
.006
.004
.002
.02
.01
0
-20
0
Figure 8: Normalized On Resistance Vs Temperature
Figure 10: Gate Current
Loaded Tape Feed Direction
I
V
D
GS
= 33 A
= 5 V
0
25˚C
125˚C
1
Die is placed into pocket
20
T
V
J
GS
– Junction Temperature ( ˚C )
bump side down
(face side down)
2
– Gate-to-Source Voltage (V)
40
60
3
80
4
under this
Gate Pad
orientation
bump is
corner
100
Die
dot
5
120
EPC1015
| PAGE 3
140
6