MCP1631RD-MCC2 Microchip Technology, MCP1631RD-MCC2 Datasheet - Page 7

• Manufacturer Part Number: MCP1631RD-MCC2
• Description: REFERENCE DESIGN MCP1631HV
• Manufacturer: Microchip Technology

Specifications of MCP1631RD-MCC2

• Main Purpose: Power Management, Battery Charger
• Embedded: Yes, MCU, 8-Bit
• Utilized Ic / Part: MCP1631HV, PIC16F883
• Primary Attributes: 1 ~ 2 Cell- Li-Ion, 1 ~ 5 Cell- NiCd/NiMH, 1 ~ 2 1W LEDs
• Secondary Attributes: Status LEDs
• Silicon Manufacturer: Microchip
• Application Sub Type: Battery Charger
• Kit Application Type: Power Management - Battery
• Silicon Core Number: MCP1631HV, PIC16F883
• Kit Contents: Board
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC CHARACTERISTICS (CONTINUED)
© 2008 Microchip Technology Inc.
Electrical Specifications: Unless otherwise noted, V
V
VS Amplifier PSRR
Common Mode Input Range
Closed-loop Voltage Gain
Low-level Output
VS Amplifier Sink Current
VS Amplifier Source Current
Peak Current Sense Input (C1)
Maximum Current Sense Signal
MCP1631/MCP1631HV
Maximum Ramp Signal
MCP1631V/MCP1631VHV
Current Sense Input Bias Current
Delay From CS to V
MCP1631
Minimum Duty Cycle
Overvoltage Sense Comparator (C2)
OV Reference Voltage High
OV Reference Voltage Low
OV Hysteresis
OV_IN Bias Current
Delay From OV to V
OV Input Capacitance
Internal Regulator HV Options Input / Output Characteristics
Input Operating Voltage
Maximum Output Current
Output Short Circuit Current
Output Voltage Regulation
V
Note 1:
DD
OUT
for typical values = 5.0V, T
Temperature Coefficient
2:
3:
4:
5:
Parameters
External Oscillator Input (OSC
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
The minimum V
TCV
temperature range. V
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
OUT
EXT
EXT
= (V
OUT-HIGH
IN
must meet two conditions: V
A
for typical values = +25°C, T
OUT-LOW
- V
OV
OV
T
T
OV_HYS
V
OV_
I
I
TCV
I
OUT-LOW
SOURCE
CS_VEXT
OV_VEXT
OUT_mA
V
DC
OUT_SC
PSRR
A3
CS_MAX
C_
I
V
Sym
I
_VREF_H
_VREF_L
V
CS_B
V
RAMP
SINK
V
OUT
CM
VCL
OL
IN
MIN
IBIAS
OV
OUT
IN
= lowest voltage measured over the temperature range.
) rise and fall times between 10 ns and 10 µs were determined during device
) *10
6
OUT(MAX)
V
/ (V
R
MCP1631/HV/MCP1631V/VHV
GND
IN
0.85
1.15
Min
250
2.7
3.5
-3.0%
—
—
—
—
—
—
—
—
—
—
—
—
—
-2
1
= 3.0V to 5.5V, F
R
* ΔTemperature), V
IN
+ V
A
≥ 3.5V and V
= -40°C to +125°C for all minimum and maximums.
V
DROPOUT(MAX)
R
0.001
2.78
1.23
1.18
Typ
-0.1
400
±0.4%
0.9
8.5
65
38
50
63
50
—
—
—
—
-5
1
5
5
OSC
IN
GND + 85
V
≥ (V
OUT-HIGH
= 1 MHz with 10% Duty Cycle, C
R
AV
Max
0.98
1.23
16.0
150
150
+3.0%
2.9
or 3.5V, whichever is greater.
25
—
—
—
—
—
—
—
—
—
—
0
1
DD
OUT(MAX)
= highest voltage measured over the
Units
ppm/
V/V
mV
mA
mA
mV
mA
mA
dB
µA
µA
pF
ns
ns
°C
%
V
V
V
V
V
V
V
+ V
DROPOUT(MAX)
V
Rail to Rail Input
R
100 mV < V
V
RL = 5 kΩ to V
V
Maximum CS input range limited
by comparator input common
mode range. V
V
Note 1
V
V
Overvoltage Comparator
Hysteresis
Delay from OV detection to PWM
termination (Note 1)
Note 2
V
V
Current (average current)
measured 10 ms after short is
applied.
V
Note 3
IN
CM
IN
IN
FB
CS
IN
OUT
R
L
= 5 kΩ to V
= 3.3V or 5.0V
OUT
= 3.0V to 5.0V, V
> 4V
= 5V
= V
= V
= GND
= 1.2V
= GND,
IN(MIN)
.
REF
Conditions
EAOUT
).
+ 0.1V,
IN
(Note 2),
IN
IN
CS_MAX
= 0.1 µF,
DS22063B-page 7
/2,
/2
< V
CM
IN
= V
- 100 mV,
= 1.2V
IN
-1.4V