LMV1089RLEVAL National Semiconductor, LMV1089RLEVAL Datasheet - Page 10

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LMV1089RLEVAL

Manufacturer Part Number
LMV1089RLEVAL
Description
BOARD EVALUATION LMV1089
Manufacturer
National Semiconductor
Series
PowerWise®r
Datasheets

Specifications of LMV1089RLEVAL

Main Purpose
Audio, Microphone Amp
Embedded
No
Utilized Ic / Part
LMV1089
Primary Attributes
Dual Input, Single Output
Secondary Attributes
Graphical User Interface, I²C Interface
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
www.national.com
Test Methods
FAR FIELD NOISE SUPPRESSION (FFNS
For optimum noise suppression the far field noise should be
in a broadside array configuration from the two microphones
(see Figure 15). Which means the far field sound source is
equidistance from the two microphones. This configuration
allows the amplitude of the far field signal to be equal at the
two microphone inputs, however a slight phase difference
may still exist. To simulate a real world application a slight
phase delay was added to the FFNS
from Figure 3 is used with the following procedure to measure
the FFNS
1.
2.
3.
4.
5.
NEAR FIELD SPEECH LOSS (NFSL
For optimum near field speech preservation, the sound
source should be in an endfire array configuration from the
A sine wave with equal frequency and amplitude
(25mV
generator, the phase of Mic 2 is delayed by 1.1° when
compared with Mic1.
Measure the output level in dBV (X)
Mute the signal from Mic2
Measure the output level in dBV (Y)
FFNS
E
E
.
P-P
= Y - X dB
) is applied to Mic1 and Mic2. Using a signal
E
test. The block diagram
E
)
FIGURE 3. FFNS
E
)
E
, NFSL
10
E
, SNRI
two microphones (see Figure 16). In this configuration the
speech signal at the microphone closest to the sound source
will have greater amplitude than the microphone further away.
Additionally the signal at microphone further away will expe-
rience a phase lag when compared with the closer micro-
phone. To simulate this, phase delay as well as amplitude
shift was added to the NFSL
3 is used with the following procedure to measure the NF-
SL
1.
2.
3.
4.
5.
SINGLE TO NOISE RATIO IMPROVEMENT ELECTRICAL
(SNRI
The SNRI
E
.
A 25mV
applied to Mic1 and Mic2 respectively. Once again, a
signal generator is used to delay the phase of Mic2 by
15.9° when compared with Mic1.
Measure the output level in dBV (X)
Mute the signal from Mic2
Measure the output level in dBV (Y)
NFSL
E
E
SNRI
)
Test Circuit
E
E
is the ratio of FFNS
= Y - X dB
E
P-P
= FFNS
and 17.25mV
E
- NFSL
E
test. The schematic from Figure
P-P
E
E
(0.69*25mV
to NFSL
30047212
E
and is defined as:
P-P
) sine wave is

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