STEVAL-ISA031V1 STMicroelectronics, STEVAL-ISA031V1 Datasheet - Page 4

BOARD EVAL L6565/STW4N150 BASED

STEVAL-ISA031V1

Manufacturer Part Number
STEVAL-ISA031V1
Description
BOARD EVAL L6565/STW4N150 BASED
Manufacturer
STMicroelectronics
Type
MOSFET & Power Driverr
Datasheets

Specifications of STEVAL-ISA031V1

Main Purpose
AC/DC, Primary Side
Outputs And Type
2, Isolated
Power - Output
40W
Voltage - Output
24V, 5V
Current - Output
1.7A, 1A
Voltage - Input
185 ~ 450VAC
Regulator Topology
Flyback
Board Type
Fully Populated
Utilized Ic / Part
L6565, STW4N150
Input Voltage
185 V to 460 V
Output Voltage
5 V, 24 V
Product
Power Management Modules
Silicon Manufacturer
ST Micro
Silicon Core Number
L6565, STW4N150
Kit Application Type
Power Management
Application Sub Type
SMPS
Kit Contents
Board
Rohs Compliant
No
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Switching
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
For Use With/related Products
L6565, STW4N150
Other names
497-6415
STEVAL-ISA031V1

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STEVAL-ISA031V1
Manufacturer:
STMicroelectronics
Quantity:
1
Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
V
Symbol
Symbol
CASE
V
R
(BR)DSS
g
t
t
C
I
I
C
C
GS(th)
d(on)
d(off)
Q
Q
DS(on
DSS
GSS
fs
Q
T
oss
t
rss
iss
gs
gd
f
r
g
(1)
= 25 °C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 11262 Rev 9
I
V
V
V
V
V
D
V
V
V
V
R
Figure 19
V
V
Figure 20
GS
GS
DS
DS
DS
GS
GS
DS
DS
DD
DD
G
= 1 mA, V
= Max rating
= Max rating, T
= 4.7 Ω, V
= V
= ± 30 V
= 10 V, I
= 30 V, I
= 25 V, f = 1 MHz,
= 0
= 750 V, I
= 600 V, I
= 10 V
Test conditions
Test conditions
GS
, I
GS
D
D
D
= 250 µA
GS
= 2 A
D
D
= 2 A
= 0
= 2 A,
= 4 A,
= 10 V
STFW4N150, STP4N150, STW4N150
C
= 125 °C
1500
Min.
Min. Typ. Max.
3
-
-
-
-
1300
Typ. Max. Unit
120
3.5
12
35
30
45
45
30
10
9
4
5
± 100
500
50
10
5
7
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S

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