STEVAL-ISA054V1 STMicroelectronics, STEVAL-ISA054V1 Datasheet - Page 9

• Manufacturer Part Number: STEVAL-ISA054V1
• Description: BOARD DEMO STW9N150 100W 3PHASE
• Manufacturer: STMicroelectronics
• Type: MOSFET & Power Driverr

Specifications of STEVAL-ISA054V1

• Main Purpose: AC/DC, Primary Side
• Outputs And Type: 2, Isolated
• Power - Output: 100W
• Voltage - Output: 24V, 3.3V or 5V
• Current - Output: 4A, 1A
• Voltage - Input: 180 ~ 265VAC & 320 ~ 480VAC
• Regulator Topology: Flyback
• Frequency - Switching: 250kHz
• Board Type: Fully Populated
• Utilized Ic / Part: L5970, STW9N150, UC3844B
• Input Voltage: 180 V to 265 V, 400 V
• Output Voltage: 3.3 V, 5 V, 24 V
• Product: Power Management Modules
• Silicon Manufacturer: ST Micro
• Silicon Core Number: STW9N150
• Kit Application Type: Power Management
• Application Sub Type: Auxiliary Power Supply
• Kit Contents: Board
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: STW9N150
• Other names: 497-8849

UM0674
2
Specifics of the STW9N150 MOSFET
Using the well-consolidated high voltage MESH OVERLAY™ process, STMicroelectronics
has designed an advanced family of power MOSFETs with outstanding performances. The
strengthened layout coupled with the company's proprietary-edge termination structure
gives the lowest R
In particular, the proposed board employs as primary switch the STW9N150, a 1.8 Ω, 8 A,
1500 V power MOSFET.
Table 2.
1. Pulse width limited by safe operating area.
Table 3.
V
V
I
I
I
P
T
T
V
I
I
V
R
D
D
DM
DSS
GSS
J
stg
DS
GS
TOT
(BR)DSS
GS(th)
DS(on)
Symbol
(1)
Symbol
Absolute maximum ratings
Electrical characteristics: on /off states
Drain source breakdown
voltage
Zero gate voltage drain
current (V
Gate-body leakage current
(V
Gate threshold voltage
Static drain source on
resistance
DS
= 0)
DS(on)
Parameter
GS
= 0)
per area, unrivalled gate charge and switching characteristics.
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Operating junction temperature
Storage temperature
Table
Doc ID 15343 Rev 1
2, 3, 4, and
I
V
V
T
V
V
V
D
C
DS
DS
GS
DS
GS
Parameter
= 1 mA, V
= 125° C
5
C
= max rating
= max rating,
= ±30 V
= V
= 10 V, I
show the characteristics of the MOSFET.
= 25°C
Test conditions
GS
GS
= 0)
, I
GS
D
D
C
C
= 250 µA
Specifics of the STW9N150 MOSFET
= 4 A
= 0
= 25 °C
= 100 °C
1500
3
Min.
-55 to 150
Value
1500
2.56
±30
320
32
8
5
4
1.8
Typ. Max. Unit
10
500
±100 nA
5
2.5
W/°C
Unit
°C
W
V
V
A
A
A
V
µA
µA
V
Ω
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