STEVAL-ISA054V1 STMicroelectronics, STEVAL-ISA054V1 Datasheet - Page 4

BOARD DEMO STW9N150 100W 3PHASE

STEVAL-ISA054V1

Manufacturer Part Number
STEVAL-ISA054V1
Description
BOARD DEMO STW9N150 100W 3PHASE
Manufacturer
STMicroelectronics
Type
MOSFET & Power Driverr

Specifications of STEVAL-ISA054V1

Main Purpose
AC/DC, Primary Side
Outputs And Type
2, Isolated
Power - Output
100W
Voltage - Output
24V, 3.3V or 5V
Current - Output
4A, 1A
Voltage - Input
180 ~ 265VAC & 320 ~ 480VAC
Regulator Topology
Flyback
Frequency - Switching
250kHz
Board Type
Fully Populated
Utilized Ic / Part
L5970, STW9N150, UC3844B
Input Voltage
180 V to 265 V, 400 V
Output Voltage
3.3 V, 5 V, 24 V
Product
Power Management Modules
Silicon Manufacturer
ST Micro
Silicon Core Number
STW9N150
Kit Application Type
Power Management
Application Sub Type
Auxiliary Power Supply
Kit Contents
Board
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
STW9N150
Other names
497-8849

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STEVAL-ISA054V1
Manufacturer:
STMicroelectronics
Quantity:
1
Electrical characteristics
2
4/12
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 5.
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
V
Symbol
Symbol
C
V
R
(BR)DSS
g
C
I
I
C
oss eq.
C
Q
GS(th)
Q
DS(on
GSS
DSS
fs
Q
R
oss
iss
rss
gs
gd
g
g
(1)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent Output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
V
V
V
f=1MHz Gate DC Bias=0
Test signal level=20 mV
open drain
V
V
(see Figure 15)
I
V
V
V
V
D
DS
DS
GS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 15 V, I
= 25 V, f = 1 MHz, V
= 0, V
= 10 V
= ± 30 V
= V
= 10 V, I
= 1200 V, I
Test conditions
Test conditions
GS
DS
, I
GS
D
D
D
= 0 to 1200 V
= 250 µA
= 4 A
= 4 A
D
= 0
= 8 A,
C
=125 °C
GS
= 0
1500
Min.
Min.
3
3255
Typ.
Typ.
22.4
89.3
15.8
50.4
294
118
7.5
2.4
1.8
4
± 100
Max.
Max.
STW9N150
500
2.5
10
5
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
V
V
S

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