NCP3065D3SLDGEVB ON Semiconductor, NCP3065D3SLDGEVB Datasheet - Page 12

• Manufacturer Part Number: NCP3065D3SLDGEVB
• Description: EVAL BOARD FOR NCP3065D3SLDG
• Manufacturer: ON Semiconductor

Specifications of NCP3065D3SLDGEVB

• Design Resources: NCP3065D3SLDGEVB BOM NCP3065D3SLDGEVB Gerber Files NCP3065D3SLDGEVB Schematic
• Current - Output / Channel: 700mA
• Outputs And Type: 1, Non-Isolated
• Voltage - Output: 7 ~ 23 V
• Voltage - Input: 12V
• Utilized Ic / Part: NCP3065
• Core Chip: NCP3065
• Topology: SEPIC
• No. Of Outputs: 1
• Output Current: 1A
• Output Voltage: 23V
• Dimming Control Type: PWM
• Development Tool Type: Hardware - Eval/Demo Board
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Features: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• For Use With/related Products: NCP3065D3SLDG
• Other names: NCP3065D3SLDGEVBOS

Value of Components
Test Results
Name
C1
C2, C5
C3
C4
D1
D2
L1
Line Regulation
Output Ripple
Efficiency
ON/OFF
+VAUX
ON/OFF
+VIN
GND
J2
J4
J6
J7
J7
1
1
1
1
1
R1
0R15
0.1 mF
R10
1k2
R10
1k2
R2
Test
C5
BC807−LT1G BC817−LT1G
Value
100 mF/50 V, Electrolytic Capacitor
100 nF, Ceramic Capacitor, 1206
220 mF/50 V, Electrolytic Capacitor
2.2 nF, Ceramic Capacitor, 0805
MBRS140LT3G, Schottky diode
MMSZ36VT1G, Zener diode
100 mH, DO3340P−104ML Coilcraft Inductor
R3
6x 1R0 ±1%R
Q1
R4
+
220 mF / 50 V
R5
C3
Q2
V
V
V
R6
Figure 22. Boost Demo Board Application Schematic
in
in
in
= 10 V to 20 V, V
= 8 V to 20 V, V
= 10 to 20 V, I
R7
OAVG
o
o
= 22 V, I
= 22 V, I
http://onsemi.com
= 350 mA
8
7
6
5
R11
NU
1k0
R8
N.C.
COMP
I
V
100 mH
PK
CC
NCP3065
Condition
OAVG
L1
OAVG
U1
12
TCAP
SWC
SWE
GND
R
R9
= 350 mA
= 350 mA
SENSE
Name
Q2
R1
R8
R9
R10
U1
1
2
3
4
2.2 nF
MM3Z36VT1G
MBRS140LT3G
C4
Value
BC817−LT1G, SOT23
150 mW, resistor 0.5 W
1 k, resistor 0805
Load current sense resistor, 1206
1.2 k, resistor 0805
NCP3065, SOIC8
D2
D1
0.1 mF
C2
25 mA
50 mA
> 83 %
+
100 mF /
C1
50 V
Results
+LED
−LED
GND
J1
J3
J5
1
1
1