EVALPM6680A STMicroelectronics, EVALPM6680A Datasheet - Page 34
EVALPM6680A
Manufacturer Part Number
EVALPM6680A
Description
EVAL BOARD FOR PM6680A
Manufacturer
STMicroelectronics
Datasheet
1.PM6680ATR.pdf
(48 pages)
Specifications of EVALPM6680A
Mfg Application Notes
PM6680A, AN2565 Appl Note
Main Purpose
DC/DC, Step Down with LDO
Outputs And Type
3, Non-Isolated
Power - Output
10.5W
Voltage - Output
1.8V, 3.3V, 5V
Current - Output
2.5A, 2.5A, 100mA
Voltage - Input
6 ~ 36V
Regulator Topology
Buck
Frequency - Switching
200kHz, 300kHz
Board Type
Fully Populated
Utilized Ic / Part
PM6680A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6263
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Design guidelines
34/48
Equation 22
Choose a synchronous rectifier with low R
variation of the phase node voltage can bring up even the low side gate through its gate-
drain capacitance C
that minimizes the ratio C
Below there is a list of some possible low side MOSFETs.
Table 10. Low side MOSFET manufacturer
Dual n-channel MOSFETs can be used in applications with a maximum output current of
about 3 A. Below there is a list of some MOSFET manufacturers.
Table 14.
A rectifier across the low side MOSFET is recommended. The rectifier works as a voltage
clamp across the synchronous rectifier and reduces the negative inductor swing during the
dead time between turning the high-side MOSFET off and the synchronous rectifier on. It
can increase the efficiency of the switching section, since it reduces the low side switch
losses. A shottky diode is suitable for its low forward voltage drop (0.3 V). The diode reverse
voltage must be greater than the maximum input voltage V
reverse charge is preferable. Below there is a list of some shottky diode manufacturers.
Table 15.
Manufacturer
Manufacturer
Manufacturer
ST
ST
ST
Dual MOSFET manufacturer
Schottky diode manufacturer
RSS
STPS1L40M
STS4DNF60L
P
, causing cross-conduction problems. Choose a low side MOSFET
Series
conduction
RSS
Type
STS7NF60L
/C
Type
GS
=
(C
R
Forward voltage
DSon
GS
R
DSon
= C
×
0.5
(V)
DSon
⎛
⎜ ⎜
⎝
50
R
1
ISS
[VC11] 19
DSon
(mΩ)
−
. When high side MOSFET turns on, the fast
V
- C
V
IN
OUT
(mΩ)
max
RSS
Gate charge
⎞
⎟ ⎟
⎠
).
×
Rated reverse
I
voltage (V)
LOAD
(nC)
15
INmax
0.0625
C
--------------
C
40
RSS
(max)
GS
. A minimum recovery
2
Rated reverse voltage
Rated reverse voltage
Reverse current
(V)
(V)
60
60
(uA)
21
PM6680A