IRF3711 International Rectifier, IRF3711 Datasheet

MOSFET N-CH 20V 110A TO-220AB

IRF3711

Manufacturer Part Number
IRF3711
Description
MOSFET N-CH 20V 110A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF3711

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 4.5V
Input Capacitance (ciss) @ Vds
2980pF @ 10V
Power - Max
3.1W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3711

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Absolute Maximum Ratings
Thermal Resistance
Benefits
l
l
l
l
l
l
www.irf.com
Applications
Notes  through
Symbol
V
V
I
I
I
P
P
T
R
R
R
R
D
D
DM
J
DS
GS
D
D
θJC
θCS
θJA
θJA
@ T
@ T
Server Processor Power Synchronous FET
and Current
, T
Converters with Synchronous Rectification
for Telecom and Industrial Use
@T
@T
High Frequency Isolated DC-DC
High Frequency Buck Converters for
Optimized for Synchronous Buck
Converters Including Capacitive Induced
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V V
Fully Characterized Avalanche Voltage
Turn-on Immunity
STG
C
C
C
A
= 25°C
= 100°C
= 25°C
= 25°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Linear Derating Factor
are on page 11
Parameter
Parameter
„‡
GS

SMPS MOSFET
GS
GS
@ 10V
@ 10V
…‡
TO-220AB
IRF3711
V
20V
DSS
Typ.
0.50
–––
–––
–––
HEXFET Power MOSFET
-55 to + 150
R
IRF3711S
Max.
110
DS(on)
0.96
± 20
440
120
D
3.1
20
69
2
6.0mΩ
Pak
Max.
1.04
–––
max
62
40
IRF3711S
IRF3711L
PD- 94062D
IRF3711
IRF3711L
TO-262
110A †
Units
Units
W/°C
°C/W
°C
W
W
I
V
A
V
D
1

Related parts for IRF3711

IRF3711 Summary of contents

Page 1

... Typ. ‡ „ 0.50 „‡ …‡ PD- 94062D IRF3711 IRF3711S IRF3711L HEXFET Power MOSFET R max I DS(on) 110A † 6.0mΩ Pak TO-262 IRF3711S IRF3711L Max. Units 20 V ± † 110 69 A 440 120 W 3.1 W 0.96 W/°C - 150 °C Max. ...

Page 2

... IRF3711/3711S/3711L Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... DS Fig 1. Typical Output Characteristics 1000 ° 100 V DS 20µs PULSE WIDTH 10 2.0 3.0 4.0 5 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com IRF3711/3711S/3711L 1000 TOP BOTTOM 100 ° 10 0.1 10 100 Fig 2. Typical Output Characteristics 2 1.5 ° 150 C J 1.0 0.5 = 25V ...

Page 4

... IRF3711/3711S/3711L 100000 0V MHZ C iss = rss = oss = 10000 Ciss Coss 1000 Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 150 ° 0.1 0.2 0.8 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 0 0 Fig 6. Typical Gate Charge Vs. ...

Page 5

... D = 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRF3711/3711S/3711L Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor ...

Page 6

... IRF3711/3711S/3711L D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 1400 15V 1200 DRIVER 1000 + 800 600 400 V 200 (BR)DSS 0 25 Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy ...

Page 7

... Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * Fig 14. For N-Channel HEXFET www.irf.com IRF3711/3711S/3711L + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery ...

Page 8

... IRF3711/3711S/3711L E XAMPL HIS 1010 L OT CODE 1789 19, 1997 INE "C" Note: "P" in assembly line position indicates "Lead-Free" 8 INT E R NAT IONAL OGO CODE PAR T NUMB E R DAT E CODE YEAR 7 = 1997 INE C www.irf.com ...

Page 9

... AS S EMB 02, 2000 EMB LY LINE "L " Note: "P" in ass embly line pos ition indicates "Lead-F ree" OR INT E RNAT IONAL LOGO LOT CODE www.irf.com IRF3711/3711S/3711L PART NUMB E R INT ERNAT IONAL R ECT IFIER F530S LOGO DAT E CODE YEAR 0 = 2000 MBL Y WEE CODE ...

Page 10

... IRF3711/3711S/3711L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPL HIS IS AN IRL 3103L L OT CODE 1789 19, 1997 INE "C" Note: "P" embly line pos ition indicates "L ead-F ree" INT E RNAT IONAL OGO DAT E CODE 1997 ...

Page 11

... Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ‡ θ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRF3711/3711S/3711L 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 3.90 (.153) 11 ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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